参数资料
型号: V59C1G01808QALF19E
厂商: PROMOS TECHNOLOGIES INC
元件分类: DRAM
英文描述: 128M X 8 DDR DRAM, BGA68
封装: ROHS COMPLIANT, FBGA-68
文件页数: 58/79页
文件大小: 1028K
代理商: V59C1G01808QALF19E
61
ProMOS TECHNOLOGIES
V59C1G01(408/808/168)QA
V59C1G01(408/808/168)QA Rev. 1.3 June 2008
Overshoot and Undershoot Specification
AC Overshoot / Undershoot Specification for Address and Control Pins
AC Overshoot / Undershoot Specification for Clock, Data, Strobe and Mask Pins
Parameter
DDR2
-667
Units
Maximum peak amplitude allowed for overshoot area
0.9
V
Maximum peak amplitude allowed for undershoot area
0.9
V
Maximum overshoot area above VDD
0.80
V.ns
Maximum undershoot area below VSS
0. 80
V.ns
Parameter
DDR2
-667
Units
Maximum peak amplitude allowed for overshoot area
0.5
V
Maximum peak amplitude allowed for undershoot area
0.5
V
Maximum overshoot area above VDDQ
0.23
V.ns
Maximum undershoot area below VSSQ
0. 23
V.ns
VDD
VSS
Overshoot Area
Undershoot Area
Maximum Amplitude
Time (ns)
Vo
lt
s
(
V
)
VDDQ
VSSQ
Overshoot Area
Undershoot Area
Maximum Amplitude
Time (ns)
Vo
lt
s
(
V
)
DDR2
-800
0.66
0. 66
-800
0.23
0. 23
-1066
0.5 (0.9)
0.19
1
0.5 (0.9)
1
DDR2
-1066
0.5
Note 1 The maximum requirements for peak amplitude were reduced from 0.9V to 0.5V. Register vendor datasheet will specifiy the
maximum over/undershoot induced in specific RDIMM applications. DRAM vendor datasheet will also specify the maximum oversh-
oot/undershoot that their DRAM can tolerate. This will allow the RDIMM supplier to understand whether the DRAM can tolerate the
overshoot that the register will induce in the specific RDIMM application.
相关PDF资料
PDF描述
V59C1G01808QALF37E 128M X 8 DDR DRAM, BGA68
V59C1G01808QAUF37H 128M X 8 DDR DRAM, PBGA68
V59C1512804QALP19A 64M X 8 DDR DRAM, PBGA68
V59C1512804QAUF19AI 64M X 8 DDR DRAM, PBGA68
V59C1512804QAUP19AH 64M X 8 DDR DRAM, PBGA68
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