参数资料
型号: V59C1G01808QALF19E
厂商: PROMOS TECHNOLOGIES INC
元件分类: DRAM
英文描述: 128M X 8 DDR DRAM, BGA68
封装: ROHS COMPLIANT, FBGA-68
文件页数: 27/79页
文件大小: 1028K
代理商: V59C1G01808QALF19E
33
ProMOS TECHNOLOGIES
V59C1G01(408/808/168)QA
V59C1G01(408/808/168)QA Rev. 1.3 June 2008
NOP
DIN A0 DIN A1 DIN A2 DIN A3
WRITE A
Post CAS
WL = RL - 1 = 4
WRITE B
Post CAS
DIN B0 DIN B1 DIN B2 DIN B3
T0
T2
T1
T3
T4
T5
T6
T7
T8
CMD
DQ
SBR
DQS,
DQS
CK, CK
Seamless Burst Write Operation: RL=5, WL=4, BL=4
The seamless burst write operation is supported by enabling a write command every BL / 2 number of clocks.
This operation is allowed regardless of same or different banks as long as the banks are activated.
NOP
WRITE A
WL = RL - 1 = 2
T0
T2
T1
T3
T4
T5
T6
T7
T8
CMD
DQ
SBW_BL8
DQS,
DQS
WRITE B
DIN A0 DIN A1 DIN A2 DIN A3 DIN A4 DIN A5 DIN A5 DIN A7 DIN B0 DIN B1 DIN B2 DIN B3 DIN B4 DIN B5 DIN
CK, CK
Seamless Burst Write Operation: RL=3, WL=2, BL=8, noninterrupting
The seamless, non interrupting 8-bit burst write operation is supported by enabling a write command at every
BL / 2 number of clocks. This operation is allowed regardless of same or different banks as long as the banks
are activated.
相关PDF资料
PDF描述
V59C1G01808QALF37E 128M X 8 DDR DRAM, BGA68
V59C1G01808QAUF37H 128M X 8 DDR DRAM, PBGA68
V59C1512804QALP19A 64M X 8 DDR DRAM, PBGA68
V59C1512804QAUF19AI 64M X 8 DDR DRAM, PBGA68
V59C1512804QAUP19AH 64M X 8 DDR DRAM, PBGA68
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