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参数资料
| 型号： | V59C1G01808QALF19E |
| 厂商： | PROMOS TECHNOLOGIES INC |
| 元件分类： | DRAM |
| 英文描述： | 128M X 8 DDR DRAM, BGA68 |
| 封装： | ROHS COMPLIANT, FBGA-68 |
| 文件页数： | 66/79页 |
| 文件大小： | 1028K |
| 代理商： | V59C1G01808QALF19E |
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ProMOS TECHNOLOGIES
V59C1G01(408/808/168)QA
V59C1G01(408/808/168)QA Rev. 1.3 June 2008
IDD specification parameters and test conditions
(IDD values are for full operating range of Voltage and Temperature, Notes 1 - 6)
Symbol
Conditions
Max
Units
Notes
IDD0
Operating one bank active-precharge current;
tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRASmin(IDD);
CKE is HIGH, CS is HIGH between valid commands;
Address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
mA
IDD1
Operating one bank active-read-precharge current;
IOUT = 0mA;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK(IDD), tRC = tRC (IDD), tRAS = tRASmin(IDD), tRCD = tRCD(IDD);
CKE is HIGH, CS is HIGH between valid commands;
Address bus inputs are SWITCHING;
Data pattern is same as IDD4W
mA
IDD2P
Precharge power-down current;
All banks idle;
tCK = tCK(IDD);
CKE is LOW;
Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
mA
IDD2Q
Precharge quiet standby current;
All banks idle;
tCK = tCK(IDD);
CKE is HIGH, CS is HIGH;
Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
mA
IDD2N
Precharge standby current;
All banks idle;
tCK = tCK(IDD);
CKE is HIGH, CS is HIGH;
Other control and address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
mA
IDD3P
Active power-down current;
All banks open;
tCK = tCK(IDD);
CKE is LOW;
Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
Fast PDN Exit
MRS(12) = 0
mA
Slow PDN Exit
MRS(12) = 1
mA
IDD3N
Active standby current;
All banks open;
tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD);
CKE is HIGH, CS is HIGH between valid commands;
Other control and address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
mA
AC & DC operating conditions(cont'd)
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