参数资料
型号: V59C1G01808QALF19E
厂商: PROMOS TECHNOLOGIES INC
元件分类: DRAM
英文描述: 128M X 8 DDR DRAM, BGA68
封装: ROHS COMPLIANT, FBGA-68
文件页数: 11/79页
文件大小: 1028K
代理商: V59C1G01808QALF19E
19
ProMOS TECHNOLOGIES
V59C1G01(408/808/168)QA
V59C1G01(408/808/168)QA Rev. 1.3 June 2008
ODT Truth Tables
The ODT Truth Table shows which of the input pins are terminated depending on the state of address bit A10
and A11 in the EMRS for all three device organisations (x4, x8 and x16). To activate termination of any of
these pins, the ODT function has to be enabled in the EMRS by address bits A6 and A2.
Input Pin
EMRS
Adress Bit A10
EMRS
Adress Bit A11
x4 components:
DQ0~DQ3
X
DQS
X
DQS
0
X
DM
X
x8 components:
DQ0~DQ7
X
DQS
X
DQS
0
X
RDQS
X
1
RDQS
0
1
DM
X
0
x16 components:
LDQ0~LDQ7
X
UDQ0~UDQ7
X
LDQS
X
LDQS
0
X
UDQS
X
UDQS
0
X
LDM
X
UDM
X
X=Don’t Care
0=Signal Low
1=Signal High
相关PDF资料
PDF描述
V59C1G01808QALF37E 128M X 8 DDR DRAM, BGA68
V59C1G01808QAUF37H 128M X 8 DDR DRAM, PBGA68
V59C1512804QALP19A 64M X 8 DDR DRAM, PBGA68
V59C1512804QAUF19AI 64M X 8 DDR DRAM, PBGA68
V59C1512804QAUP19AH 64M X 8 DDR DRAM, PBGA68
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