参数资料
型号: FSBB15CH60C
厂商: Fairchild Semiconductor
文件页数: 24/64页
文件大小: 0K
描述: IC POWER MOD SPM 600V SPM27CC
标准包装: 10
系列: SPM™
类型: IGBT
配置: 3 相
电流: 15A
电压: 600V
电压 - 隔离: 2500Vrms
封装/外壳: SPM27CC
产品目录页面: 1223 (CN2011-ZH PDF)
Mini DIP (SPM3) Application Note (2012-07-09)
6. Interface Circuit
6.1 Input/Output Signal Connection
Figure 6.1 shows the I/O interface circuit between the CPU and Mini DIP SPM. Because the Mini DIP
SPM input logic is active-high and there are built-in pull-down resistors, external pull-up resistors are not
needed. V FO output is open collector configured. This signal should be pulled up to the positive side of the 5V
external logic power supply by a resistor of approximate 4.7k ? .
5V-Line
R PF =
4.7k ?
SPM
IN (UH) , IN (VH) , IN (W H)
CPU
100 ?
1nF
C PF =
1nF
IN (UL) , IN (VL) , IN (W L)
V FO
CO M
Figure 6.1 Recommended CPU I/O Interface Circuit
Table 6.1 Maximum ratings of input and F O pins
Item
Symbol
Condition
Rating
Unit
Applied between
Control Supply Voltage
V CC
20
V
V CC(H) – COM, V CC(L) – COM
Applied between
Input Signal Voltage
V IN
IN (UH) , IN (VH) , IN (WH) – COM
-0.3 ~ 17
V
IN (UL) , IN (VL) , IN (WL) – COM
Fault Output Supply Voltage
V FO
Applied between V FO – COM
-0.3 ~ V CC +0.3
V
The input and fault output maximum rating voltages are shown in Table 6.1. Since the fault output is
open collector configured, it’s rating is V CC +0.3V, 15V supply interface is possible. However, it is
recommended that the fault output be configured with the 5V logic supply, which is the same as the input
signals. It is also recommended that the by-pass capacitors be placed at both the CPU and Mini DIP SPM
ends of the V FO , signal line as close as possible to each device. The RC coupling at each input (parts shown
? 2008
FAIRCHILD SEMICONDUCTOR - Smart Power Module
24
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相关代理商/技术参数
参数描述
FSBB15CH60C 制造商:Fairchild Semiconductor Corporation 功能描述:Transistor
FSBB15CH60F 功能描述:IGBT 晶体管 600V SPM RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
FSBB20CH60 功能描述:IGBT 模块 HIGH_POWER RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
FSBB20CH60B 功能描述:IGBT 模块 600V -20A 3-phase RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
FSBB20CH60BT 功能描述:IGBT 模块 600V -20A 3-phase RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: