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| 型号： | FSBB15CH60C |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 42/64页 |
| 文件大小： | 0K |
| 描述： | IC POWER MOD SPM 600V SPM27CC |
| 标准包装： | 10 |
| 系列： | SPM™ |
| 类型： | IGBT |
| 配置： | 3 相 |
| 电流： | 15A |
| 电压： | 600V |
| 电压 - 隔离： | 2500Vrms |
| 封装/外壳： | SPM27CC |
| 产品目录页面： | 1223 (CN2011-ZH PDF) |
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Mini DIP (SPM3) Application Note (2012-07-09)
9. Power Loss and Dissipation
9.1 Power Loss of SPM
The total power losses in the Mini DIP SPM are composed of conduction and switching losses in the
IGBTs and FRDs. The loss during the turn-off steady state can be ignored because it is very small amount
and has little effect on increasing the temperature in the device. The conduction loss depends on the dc
electrical characteristics of the device i.e. saturation voltage. Therefore, it is a function of the conduction
current and the device’s junction temperature. On the other hand the switching loss is determined by the
dynamic characteristics like turn-on/off time and over-voltage/current. Hence, in order to obtain the accurate
switching loss, we should consider the DC-link voltage of the system, the applied switching frequency and
the power circuit layout in addition to the current and temperature.
In this chapter, based on a PWM-inverter system for motor control applications, detailed equations are
shown to calculate both losses of the Mini DIP SPM. They are for the case that 3-phase continuous
sinusoidal PWM is adopted. For other cases like 3-phase discontinuous PWMs, please refer to the paper
"Minimum-Loss Strategy for three-Phase PWM Rectifier, IEEE Transactions on Industrial Electronics, Vol. 46,
No. 3, June, 1999 by Dae-Woong Chung and Seung-Ki Sul”.
9.1.1 Conduction Loss
The typical characteristics of forward drop voltage are approximated by the following linear equation
for the IGBT and the diode, respectively.
v I ? V I ? R I ? i
v D ? V D ? R D ? i
V I = Threshold voltage of IGBT
R I = on-state slope resistance of IGBT
V D = Threshold voltage of diode
R D = on-state slope resistance of diode
(9.1)
Assuming that the switching frequency is high, the output current of the PWM-inverter can be assumed
to be sinusoidal. That is,
i ? I peak cos( ? ? ? )
(9.2)
Where ? is the phase-angle difference between output voltage and current. Using equations (9.1), the
? 2008
FAIRCHILD SEMICONDUCTOR - Smart Power Module
42
相关PDF资料 |
PDF描述 |
|---|---|
| FSBB15CH60F | MODULE SPM 600V SPM27-CA |
| FSBB20CH60CL | SMART POWER MODULE 20A SPM27-CB |
| FSBB20CH60CT | MODULE ADV MOTION SPM SPM27-CC |
| FSBB20CH60C | MODULE MOTION-SPM 600V SPM27-CC |
| FSBB20CH60SL | MODULE SPM 600V 20A SPM27-CA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FSBB15CH60C | 制造商:Fairchild Semiconductor Corporation 功能描述:Transistor |
| FSBB15CH60F | 功能描述:IGBT 晶体管 600V SPM RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FSBB20CH60 | 功能描述:IGBT 模块 HIGH_POWER RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSBB20CH60B | 功能描述:IGBT 模块 600V -20A 3-phase RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSBB20CH60BT | 功能描述:IGBT 模块 600V -20A 3-phase RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
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