- 您现在的位置：买卖IC网 > Datasheet目录624 > FSBB15CH60C (Fairchild Semiconductor)IC POWER MOD SPM 600V SPM27CC Datasheet资料下载
参数资料
| 型号： | FSBB15CH60C |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 48/64页 |
| 文件大小： | 0K |
| 描述： | IC POWER MOD SPM 600V SPM27CC |
| 标准包装： | 10 |
| 系列： | SPM™ |
| 类型： | IGBT |
| 配置： | 3 相 |
| 电流： | 15A |
| 电压： | 600V |
| 电压 - 隔离： | 2500Vrms |
| 封装/外壳： | SPM27CC |
| 产品目录页面： | 1223 (CN2011-ZH PDF) |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页当前第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页
Mini DIP (SPM3) Application Note (2012-07-09)
T j
T j =m*V X +T o
V X
Figure 9.4 Typical example of a TSP Plot with constant sense current
When the DUT attains thermal equilibrium with the hot fluid, a sense current is applied to the junction.
Then the voltage drop across the junction is measured as a function of the junction temperatures. The
amount of sense current should be small enough not to heat the DUT, for instance, 1 mA, 10 mA depending
on the device type. The measurements are repeated over a specific temperature range with some specified
temperature steps. Figure 9.4 shows a typical result.
The relationship between the junction temperature and voltage drop at a given temperature can be
expressed as shown in the following equation.
T j ? m ? V X ? T o
(9.14)
The slope, m( ℃ /V) and the temperature ordinate-intercept, T o (V) are used to quantify this straight line
relationship. The reciprocal of the slope is often referred to as the "K factor (V/ o C) ". In this case, V f (V) is the
TSP. For semiconductor junctions, the slope m of the calibrating straight line in Fig. 9.4 is always negative,
i.e., the forward conduction voltage decreases with increasing junction temperature. This process of
obtaining equation (9.14) is called the calibration procedure for a given device.
During the thermal resistance measurement test, the junction temperature can be estimated by
measuring the voltage drop at a given sense current during the calibration procedure and by using equation
(9.14). The TSP varies from device to device, since a specific device does not have the diode voltage TSP.
But the transistor saturation voltage can be used in that case. For instance, the gate turn-on voltage can be
used as the TSP for an IGBT or a MOSFET.
9.2.3 Measurement Procedures
The thermal resistance test begins by applying a continuous power of known current and voltage to the
DUT. The continuous power heats up the DUT to a thermally equilibrated state. While the device is heating, a
continuous train of sampling pulses monitors the TSP, i.e., the voltage drop or the same as the junction
? 2008
FAIRCHILD SEMICONDUCTOR - Smart Power Module
48
相关PDF资料 |
PDF描述 |
|---|---|
| FSBB15CH60F | MODULE SPM 600V SPM27-CA |
| FSBB20CH60CL | SMART POWER MODULE 20A SPM27-CB |
| FSBB20CH60CT | MODULE ADV MOTION SPM SPM27-CC |
| FSBB20CH60C | MODULE MOTION-SPM 600V SPM27-CC |
| FSBB20CH60SL | MODULE SPM 600V 20A SPM27-CA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FSBB15CH60C | 制造商:Fairchild Semiconductor Corporation 功能描述:Transistor |
| FSBB15CH60F | 功能描述:IGBT 晶体管 600V SPM RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FSBB20CH60 | 功能描述:IGBT 模块 HIGH_POWER RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSBB20CH60B | 功能描述:IGBT 模块 600V -20A 3-phase RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSBB20CH60BT | 功能描述:IGBT 模块 600V -20A 3-phase RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
发布紧急采购，3分钟左右您将得到回复。