参数资料
型号: FSBB15CH60C
厂商: Fairchild Semiconductor
文件页数: 26/64页
文件大小: 0K
描述: IC POWER MOD SPM 600V SPM27CC
标准包装: 10
系列: SPM™
类型: IGBT
配置: 3 相
电流: 15A
电压: 600V
电压 - 隔离: 2500Vrms
封装/外壳: SPM27CC
产品目录页面: 1223 (CN2011-ZH PDF)
Mini DIP (SPM3) Application Note (2012-07-09)
6.2 General Interface Circuit Example
Figure 6.3 shows a typical application circuit of interface schematic with control signals connected
directly to a CPU.
WH
C6
15V line
C1
C4
(19) V B(W)
(18) V CC
(17) IN (WH)
(20) V S(W)
VB
VCC
COM
IN
OUT
VS
P (27)
W (26)
P
W
(15) V B(V)
VB
VH
C2
C5
(14) V CC
(13) IN (VH)
(16) V S(V)
VCC
COM
IN
OUT
VS
V (25)
V
(11) V B(U)
VB
C
P
UH
5V line
C3
C5
(10) V CC
(9) IN (UH)
(12) V S(U)
VCC
COM
IN
OUT
VS
U (24)
C11
U
U
Fo
R1
C7
(8) C SC
(7) C FOD
(6) V FO
C(SC) OUT(WL)
C(FOD)
VFO
N W (23)
WL
VL
UL
5V line 15V line
15V line
(5) IN (WL)
(4) IN (VL)
(3) IN (UL)
(2) COM
(1) V CC
IN(WL) OUT(VL)
IN(VL)
IN(UL)
COM
OUT(UL)
N V (22)
R3
N
15V
VCC
V SL
N U (21)
5V
ZD1
C8
C9
R2
GND
C10
Figure 6.3 Example of application circuit
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
To avoid malfunction, the wiring of each input should be as short as possible. (less than 2-3cm)
By virtue of integrating an application specific type HVIC inside the Mini DIP SPM, direct coupling to
CPU terminals without any opto-coupler or transformer isolation is possible.
V FO output is an open collector output. This signal line should be pulled up to the positive side of the 5V
logic power supply with approximately 4.7k ? resistance. (reference Figure 6.1)
A C SP15 capacitance value approximately 7 times larger than bootstrap capacitor C BS is recommended.
The V FO output pulse width is determined by the value of an external capacitor (C FOD ) between C FOD
(pin7) and COM (pin2). (Example : if C FOD = 33 nF, then t FO = 1.8ms (typ.)). Please refer to the
approximate equation of C FOD pin in page 16 for calculation method.
The input signals are Active-high configured. There is a internal 5k ?? pull-down resistor from each input
signal line to GND. When employing RC coupling circuits between the CPU and Mini DIP SPM select the
RC values such that the input signals will be compatible with the Mini DIP SPM turn-off/turn-on threshold
voltages.
To prevent protection function errors, the R F and C SC wiring should be as short as possible.
The short-circuit protection time constant R F C SC should be set in the range of 1~2 ? sec.
? 2008
FAIRCHILD SEMICONDUCTOR - Smart Power Module
26
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参数描述
FSBB15CH60C 制造商:Fairchild Semiconductor Corporation 功能描述:Transistor
FSBB15CH60F 功能描述:IGBT 晶体管 600V SPM RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
FSBB20CH60 功能描述:IGBT 模块 HIGH_POWER RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
FSBB20CH60B 功能描述:IGBT 模块 600V -20A 3-phase RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
FSBB20CH60BT 功能描述:IGBT 模块 600V -20A 3-phase RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: