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| 型号： | FSBB15CH60C |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 7/64页 |
| 文件大小： | 0K |
| 描述： | IC POWER MOD SPM 600V SPM27CC |
| 标准包装： | 10 |
| 系列： | SPM™ |
| 类型： | IGBT |
| 配置： | 3 相 |
| 电流： | 15A |
| 电压： | 600V |
| 电压 - 隔离： | 2500Vrms |
| 封装/外壳： | SPM27CC |
| 产品目录页面： | 1223 (CN2011-ZH PDF) |
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Mini DIP (SPM3) Application Note (2012-07-09)
Al
I C
Wire IGBT
FRD
Lead
Frame
DBC
Epoxy Molding Compound
Full pack
Figure 1.1 Cross Sections of Mini DIP SPM
HVIC is sensitive to noise since it is not a complete galvanic isolation structure but is implemented as a
level shift latch logic using high voltage LDMOS that passes signals from upper side gate and lower side
gate. Consequently, it was designed with sufficient immunity against such possible malfunctions as latch-on,
latch-up, and latch-off caused by IGBT switching noise and system outside noise. Fairchild’s Mini DIP SPM
design has also taken into consideration the possibility of high side malfunction caused by short PWM pulse.
Since the low voltage part and the high voltage part are configured onto the same silicon in the HVIC, it
cannot operate normally when the electric potential in the high voltage part becomes lower than the ground
of the low voltage part. Accordingly, sufficient margin was given to take into consideration the negative
voltage level that could cause such abnormal operation. Soft turn-off function was added to secure basic
IGBT SOA (Safe Operating Area) under short circuit conditions.
1.4 Advantage of Mini DIP SPM-driven inverter drives
SPM Inverter Engine Platform
Mini DIP SPM was designed to have 3A~30A rated current of products built into a single package
outline. Figure 1.2 shows the junction to case thermal resistance at each current range of the Mini DIP SPM.
As seen in the figure, in the 15A, 20A and 30A range, intelligent 3-phase IGBT module with high power
density (Size vs. Power) was implemented. Accordingly, in the low power range, inverter system designers
are able to cover almost the entire range of 0.1KW~3KW rating in a single power circuit design using Mini
DIP SPM. Since circuitry and tools can become more standardized, product development and testing
process are simplified, significantly reducing development time and cost. Through control board
standardization, overall manufacturing cost will be substantially reduced as users are able to simplify
materials purchasing and maintain manufacturing consistency.
? 2008
FAIRCHILD SEMICONDUCTOR - Smart Power Module
7
相关PDF资料 |
PDF描述 |
|---|---|
| FSBB15CH60F | MODULE SPM 600V SPM27-CA |
| FSBB20CH60CL | SMART POWER MODULE 20A SPM27-CB |
| FSBB20CH60CT | MODULE ADV MOTION SPM SPM27-CC |
| FSBB20CH60C | MODULE MOTION-SPM 600V SPM27-CC |
| FSBB20CH60SL | MODULE SPM 600V 20A SPM27-CA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FSBB15CH60C | 制造商:Fairchild Semiconductor Corporation 功能描述:Transistor |
| FSBB15CH60F | 功能描述:IGBT 晶体管 600V SPM RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FSBB20CH60 | 功能描述:IGBT 模块 HIGH_POWER RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSBB20CH60B | 功能描述:IGBT 模块 600V -20A 3-phase RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSBB20CH60BT | 功能描述:IGBT 模块 600V -20A 3-phase RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
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