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参数资料
| 型号： | FSBB15CH60C |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 6/64页 |
| 文件大小： | 0K |
| 描述： | IC POWER MOD SPM 600V SPM27CC |
| 标准包装： | 10 |
| 系列： | SPM™ |
| 类型： | IGBT |
| 配置： | 3 相 |
| 电流： | 15A |
| 电压： | 600V |
| 电压 - 隔离： | 2500Vrms |
| 封装/外壳： | SPM27CC |
| 产品目录页面： | 1223 (CN2011-ZH PDF) |
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Mini DIP (SPM3) Application Note (2012-07-09)
functionality required for low power inverter drives. The HVIC has a built-in high voltage level shift function
that enables the ground referenced PWM signal to be sent directly to the Mini DIP SPM’s assigned high side
IGBT gate circuit. This level shift function enables opto-coupler-less interface, making it possible to design a
very simple system. In addition a built-in under-voltage lockout (UVLO) protection function interrupts IGBT
operation under control supply under-voltage conditions. Because the bootstrap charge-pump circuit
interconnects to the low-side VCC bias internal to the Mini DIP SPM, the high-side gate drive power can be
obtained from a single 15V control supply referenced to control ground. It is not necessary to have three
isolated voltage sources for the high-side IGBT gate drive required in inverter systems that use conventional
power modules. Mini DIP SPM V4 incorporates built in bootstrap diodes which characteristics are fast
reverse recovery including bootstrap resistance characteristics, about 15 ohm.
Recent progress in the HVIC technology includes chip downsizing through the introduction of wafer
fine process technology.
Input control logic change from the conventional low active to high active permits
direct interface to 3.3V micro-controllers or DSPs. This provides low circuit current, increased noise immunity
and good performance stability against temperature variation.
Package Technology
Since heat dissipation is an important factor limiting the power module’s current capability, the heat
dissipation characteristics of a package are critical in determining the Mini DIP SPM performance.
A trade-
off exists between heat dissipation characteristics and isolation characteristics. The key to a good package
technology lies in the implementation of outstanding heat dissipation characteristic s without compromising
the isolation rating.
In Mini DIP SPM, a technology was developed in which bare ceramic with good heat dissipation
characteristics is attached directly to the lead frame. For expansion to a targeted power rating of 20A and
30A in this same physical package size, DBC (Direct Bonding Copper) technology was applied. In addition,
for optimization of cost to performance up to a power rating of 10A, full molded type technology was applied.
This made it possible to achieve optimum trade-off characteristics while maintaining cost-effectiveness.
Figure 1.1 shows the cross sections of the Mini DIP SPM V4 package. In full molded packages, the
lead frame structure was bent to secure the required electrical spacing. In DBC package, the lead frame and
the DBC substrate are directly soldered into the Mini DIP SPM lead frame.
Inverter System Technology
The Mini DIP SPM package is designed to satisfy the basic UL, IEC and etc. clearance and creepage
spacing safety regulations required in inverter systems. In Mini DIP SPM, 3.1mm clearance and 4mm
creepage were secured in all areas where high voltage is applied. Exceptionally, 2.65mm clearance and
3.7mm creepage were secured in full molded type package. In addition, the Cu frame pattern and wire
connection have been optimized with the aid of computer simulation for less parasitic inductance, which is
favorable to the suppression of voltage surge at high frequency switching operation.
? 2008
FAIRCHILD SEMICONDUCTOR - Smart Power Module
6
相关PDF资料 |
PDF描述 |
|---|---|
| FSBB15CH60F | MODULE SPM 600V SPM27-CA |
| FSBB20CH60CL | SMART POWER MODULE 20A SPM27-CB |
| FSBB20CH60CT | MODULE ADV MOTION SPM SPM27-CC |
| FSBB20CH60C | MODULE MOTION-SPM 600V SPM27-CC |
| FSBB20CH60SL | MODULE SPM 600V 20A SPM27-CA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FSBB15CH60C | 制造商:Fairchild Semiconductor Corporation 功能描述:Transistor |
| FSBB15CH60F | 功能描述:IGBT 晶体管 600V SPM RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FSBB20CH60 | 功能描述:IGBT 模块 HIGH_POWER RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSBB20CH60B | 功能描述:IGBT 模块 600V -20A 3-phase RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSBB20CH60BT | 功能描述:IGBT 模块 600V -20A 3-phase RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
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