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参数资料
| 型号： | FSBB15CH60C |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 44/64页 |
| 文件大小： | 0K |
| 描述： | IC POWER MOD SPM 600V SPM27CC |
| 标准包装： | 10 |
| 系列： | SPM™ |
| 类型： | IGBT |
| 配置： | 3 相 |
| 电流： | 15A |
| 电压： | 600V |
| 电压 - 隔离： | 2500Vrms |
| 封装/外壳： | SPM27CC |
| 产品目录页面： | 1223 (CN2011-ZH PDF) |
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Mini DIP (SPM3) Application Note (2012-07-09)
where, E I i is the switching loss energy of the IGBT and E D i is for the diode . E I and E D can be
considered a constant approximately.
As mentioned in the above equation (9.2), the output current can be considered a sinusoidal waveform
and the switching loss occurs every PWM period in the continuous PWM schemes. Therefore, depending on
the switching frequency of f SW , the switching loss of one device is the following equation (9.10).
? ?
? ( E
? ? ?
P sw ?
1
2 ?
?
2
?
2
I
? E D ) i f sw d ?
? ?
? cos( ? ? ? ) d ? ?
? ? ?
?
( E I ? E D ) f sw I peak
2 ?
?
2
?
2
( E I ? E D ) f sw I peak
?
(9.10)
where E I is a unique constant of IGBT related to the switching energy and different IGBT has different
E I value. E D is one for diode. Those should be derived by experimental measurement. From equation (9.10),
it should be noted that the switching losses are a linear function of current and directly proportional to the
switching frequency.
9.2 Thermal Impedance
9.2.1 Overview
Semiconductor devices are very sensitive to junction temperature, i.e., as the junction temperature
increases, the operating characteristics of a device are altered from normal, and the failure rate increases
exponentially. This makes the thermal design of the package a very important factor in the device
development stage, and also in an application field.
To gain insight into the device’s thermal performance, it is normal to introduce thermal resistance,
which is defined as the difference in temperature between two closed isothermal surfaces divided by the total
heat flow between them. For semiconductor devices, two temperatures are junction temperature, T j and
reference temperature, T x , and the amount of heat flow is equal to the power dissipation of a device during
operation. The selection of a reference point is arbitrary, but usually the hottest spot on the back of a device
on which a heat sink is attached is chosen. This is called junction-to-case thermal resistance, R ? jc . When the
reference point is an ambient temperature, this is called junction-to-ambient thermal resistance, R ? ja . Both
the thermal resistances are used for the characterization of a device’s thermal performance. R ? jc is usually
used for heat sink carrying devices while R ? ja is used in other cases. Figure 9.1 shows a thermal network of
heat flow from junction-to-ambient for the SPM including a heat sink. The dotted component of R ? ca can be
? 2008
FAIRCHILD SEMICONDUCTOR - Smart Power Module
44
相关PDF资料 |
PDF描述 |
|---|---|
| FSBB15CH60F | MODULE SPM 600V SPM27-CA |
| FSBB20CH60CL | SMART POWER MODULE 20A SPM27-CB |
| FSBB20CH60CT | MODULE ADV MOTION SPM SPM27-CC |
| FSBB20CH60C | MODULE MOTION-SPM 600V SPM27-CC |
| FSBB20CH60SL | MODULE SPM 600V 20A SPM27-CA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FSBB15CH60C | 制造商:Fairchild Semiconductor Corporation 功能描述:Transistor |
| FSBB15CH60F | 功能描述:IGBT 晶体管 600V SPM RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FSBB20CH60 | 功能描述:IGBT 模块 HIGH_POWER RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSBB20CH60B | 功能描述:IGBT 模块 600V -20A 3-phase RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSBB20CH60BT | 功能描述:IGBT 模块 600V -20A 3-phase RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
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