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参数资料
| 型号： | FSBB15CH60C |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/64页 |
| 文件大小： | 0K |
| 描述： | IC POWER MOD SPM 600V SPM27CC |
| 标准包装： | 10 |
| 系列： | SPM™ |
| 类型： | IGBT |
| 配置： | 3 相 |
| 电流： | 15A |
| 电压： | 600V |
| 电压 - 隔离： | 2500Vrms |
| 封装/外壳： | SPM27CC |
| 产品目录页面： | 1223 (CN2011-ZH PDF) |
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Mini DIP (SPM3) Application Note (2012-07-09)
1. Introduction
1.1 Introduction
The terms “energy-saving” and “quiet-running” are becoming very important in the world of variable
speed motor drives. For low-power motor control, there are increasing demands for compactness, built-in
control, and lower overall-cost. An important consideration, in justifying the use of inverters in these
applications, is to optimize the total-cost-performance ratio of the overall drive system. In other words, the
systems have to be less noisy, more efficient, smaller and lighter, more advanced in function and more
accurate in control with a very low cost.
In order to meet these needs, Fairchild has developed a new series of compact, high-functionality, and
high efficiency power semiconductor device called “Mini DIP SPM (Mini DIP Smart Power Module)”. Mini
DIP SPM-based inverters are now considered an attractive alternative to conventional discrete-based
inverters for low-power motor drives, specifically for appliances such as washing machines, air-conditioners,
refrigerators, water pumps etc.
Mini DIP SPM combines optimized circuit protection and drive matched to the IGBT’s switching
characteristics. System reliability is further enhanced by the integrated under-voltage protection function and
short circuit protection function. The high speed built-in HVIC provides an opto-coupler-less IGBT gate
driving capability that further reduces the overall size of the inverter system design. Additionally, the
incorporated HVIC allows the use of a single-supply drive topology without negative bias.
The objective of this application note is to show the details of Mini DIP SPM power circuit design and
its application to Mini DIP SPM users. This document provides design examples that should enable motor
drive design engineers to create efficient optimized designs with shortened design cycles by employing
Fairchild Mini DIP SPM products.
1.2 Mini DIP SPM Design Concept
The key Mini DIP SPM design objective is to create a smart power module with improved reliability.
This is achieved by applying existing IC and LSI transfer mold packaging technology. The Mini DIP SPM
structure is relatively compact: power chips and IC chips are directly die bonded on the copper lead frame,
the bare ceramic material is attached to the frame, and then molded into epoxy resin. In comparison, the
conventional IPM is made of power chips bonded on a metal or ceramic substrate with the ICs and the
passive components assembled on a PCB. This is then assembled into a plastic or epoxy resin case and
filled up with silicon gel. The Mini DIP SPM greatly minimizes the number of parts and material types,
optimizing the assembly process and overall cost.
A second important Mini DIP SPM design advantage is the realization of a product with smaller size
? 2008
FAIRCHILD SEMICONDUCTOR - Smart Power Module
4
相关PDF资料 |
PDF描述 |
|---|---|
| FSBB15CH60F | MODULE SPM 600V SPM27-CA |
| FSBB20CH60CL | SMART POWER MODULE 20A SPM27-CB |
| FSBB20CH60CT | MODULE ADV MOTION SPM SPM27-CC |
| FSBB20CH60C | MODULE MOTION-SPM 600V SPM27-CC |
| FSBB20CH60SL | MODULE SPM 600V 20A SPM27-CA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FSBB15CH60C | 制造商:Fairchild Semiconductor Corporation 功能描述:Transistor |
| FSBB15CH60F | 功能描述:IGBT 晶体管 600V SPM RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FSBB20CH60 | 功能描述:IGBT 模块 HIGH_POWER RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSBB20CH60B | 功能描述:IGBT 模块 600V -20A 3-phase RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSBB20CH60BT | 功能描述:IGBT 模块 600V -20A 3-phase RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
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