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| 型号： | FSBB15CH60C |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 5/64页 |
| 文件大小： | 0K |
| 描述： | IC POWER MOD SPM 600V SPM27CC |
| 标准包装： | 10 |
| 系列： | SPM™ |
| 类型： | IGBT |
| 配置： | 3 相 |
| 电流： | 15A |
| 电压： | 600V |
| 电压 - 隔离： | 2500Vrms |
| 封装/外壳： | SPM27CC |
| 产品目录页面： | 1223 (CN2011-ZH PDF) |
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Mini DIP (SPM3) Application Note (2012-07-09)
and higher power rating. Of the low power modules released to date, the Mini DIP SPM has the highest
power density with 3A to 30A rated products built into a single package outline.
The third design advantage is design flexibility enabling use in a wide range of applications. The Mini
DIP SPM series has the 3-N terminal structure with the negative rail IGBT emitters terminated separately.
With this structure, shunt resistance can be placed in series with each 3-N terminal to easily sense individual
inverter phase currents.
The detailed features and integrated functions of Mini DIP SPM are as follows:
? 600V/3A to 30A ratings in one package (with identical mechanical layouts)
? Low-loss efficient IGBTs and FRDs optimized for motor drive applications
? High reliability due to fully tested coordination of HVIC and IGBTs
? 3-phase IGBT Inverter Bridge including control ICs for gate drive and protection
— High-Side Features: Control circuit under voltage (UV) protection (without fault signal output)
— Low-Side Features: UV, Thermal Shut Down(TSD) and short-circuit (SC) protection
through external shunt resistor (With fault signal output),
? Single-grounded power supply and opto-coupler-less interface due to built-in HVIC
? Active-High input signal logic resolves the startup and shutdown sequence constraint between the
VCC control supply and control input providing fail-safe operation with direct connection between the
Mini DIP SPM and a 3.3V CPU or DSP. Additional external sequence logic is not needed
? Divided negative DC-link terminals for inverter applications requiring individual phase current
sensing
? Easy PCB layout due to built in bootstrap diode
? Isolation voltage rating of 2500Vrms for one minute
? Very low leakage current due to full molded or DBC substrate.
1.3 Mini DIP SPM Technology
POWER Devices – IGBT and FRD
The Mini DIP SPM performance improvement is primarily the result of the technological advancement
of the power devices (i.e., IGBTs and FRDs) in the 3-phase inverter circuit.
The fundamental design goal is
to reduce the die size and increase the current density of these power devices. The Mini DIP SPM IGBTs
represent Fairchild's latest technology.
Through optimized NPT IGBT design, they maintain an SOA (Safe
Operating Area) suitable for motor control application while dramatically reducing the on-state conduction
and turn-off switching losses. They also implement smooth switching performance without sacrificing other
characteristics. The FRDs are Ultrafast diodes that have a low forward voltage drop along with soft recovery
characteristics.
Control IC – LVIC, HVIC & Bootstrap diode
The Mini DIP SPM HVIC and LVIC driver ICs were designed to have only the minimum necessary
? 2008
FAIRCHILD SEMICONDUCTOR - Smart Power Module
5
相关PDF资料 |
PDF描述 |
|---|---|
| FSBB15CH60F | MODULE SPM 600V SPM27-CA |
| FSBB20CH60CL | SMART POWER MODULE 20A SPM27-CB |
| FSBB20CH60CT | MODULE ADV MOTION SPM SPM27-CC |
| FSBB20CH60C | MODULE MOTION-SPM 600V SPM27-CC |
| FSBB20CH60SL | MODULE SPM 600V 20A SPM27-CA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FSBB15CH60C | 制造商:Fairchild Semiconductor Corporation 功能描述:Transistor |
| FSBB15CH60F | 功能描述:IGBT 晶体管 600V SPM RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FSBB20CH60 | 功能描述:IGBT 模块 HIGH_POWER RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSBB20CH60B | 功能描述:IGBT 模块 600V -20A 3-phase RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSBB20CH60BT | 功能描述:IGBT 模块 600V -20A 3-phase RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
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