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参数资料
| 型号： | FSBB15CH60C |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 57/64页 |
| 文件大小： | 0K |
| 描述： | IC POWER MOD SPM 600V SPM27CC |
| 标准包装： | 10 |
| 系列： | SPM™ |
| 类型： | IGBT |
| 配置： | 3 相 |
| 电流： | 15A |
| 电压： | 600V |
| 电压 - 隔离： | 2500Vrms |
| 封装/外壳： | SPM27CC |
| 产品目录页面： | 1223 (CN2011-ZH PDF) |
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Mini DIP (SPM3) Application Note (2012-07-09)
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Figure 10.1 Flatness measurement position
10.2 Handling Precaution
When using semiconductors, the incidence of thermal and/or mechanical stress to the devices due to
improper handling may result in significant deterioration of their electrical characteristics and/or reliability.
Transportation
Handle the device and packaging material with care. To avoid damage to the device, do not toss or
drop. During transport, ensure that the device is not subjected to mechanical vibration or shock. Avoid
getting devices wet. Moisture can also adversely affect the packaging (by nullifying the effect of the
antistatic agent). Place the devices in special conductive trays. When handling devices, hold the package
and avoid touching the leads, especially the gate terminal. Put package boxes in the correct direction.
Putting them upside down, leaning them or giving them uneven stress might cause the electrode terminals
to be deformed or the resin case to be damaged. Throwing or dropping the packaging boxes might cause
the devices to be damaged. Wetting the packaging boxes might cause the breakdown of devices when
operating. Pay attention not to wet them when transporting on a rainy or a snowy day.
Storage
1) Avoid locations where devices will be exposed to moisture or direct sunlight. (Be especially careful
during periods of rain or snow.)
2) Do not place the device cartons upside down. Stack the cartons atop one another in an uprighrt
position only. : Do not place cartons on their sides.
3) The storage area temperature should be maintained within a range of 5 ? C to 35 ? C , with humidity kept
within the range from 40% to 75%.
4) Do not store devices in the presence of harmful (especially corrosive) gases, or in dusty conditions.
5) Use storage areas where there is minimal temperature fluctuation. Rapid temperature changes can
cause moisture condensation on stored devices, resulting in lead oxidation or corrosion. As a result,
lead solderability will be degraded.
? 2008
FAIRCHILD SEMICONDUCTOR - Smart Power Module
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相关PDF资料 |
PDF描述 |
|---|---|
| FSBB15CH60F | MODULE SPM 600V SPM27-CA |
| FSBB20CH60CL | SMART POWER MODULE 20A SPM27-CB |
| FSBB20CH60CT | MODULE ADV MOTION SPM SPM27-CC |
| FSBB20CH60C | MODULE MOTION-SPM 600V SPM27-CC |
| FSBB20CH60SL | MODULE SPM 600V 20A SPM27-CA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FSBB15CH60C | 制造商:Fairchild Semiconductor Corporation 功能描述:Transistor |
| FSBB15CH60F | 功能描述:IGBT 晶体管 600V SPM RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FSBB20CH60 | 功能描述:IGBT 模块 HIGH_POWER RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSBB20CH60B | 功能描述:IGBT 模块 600V -20A 3-phase RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSBB20CH60BT | 功能描述:IGBT 模块 600V -20A 3-phase RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
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