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| 型号： | FSBB15CH60C |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 29/64页 |
| 文件大小： | 0K |
| 描述： | IC POWER MOD SPM 600V SPM27CC |
| 标准包装： | 10 |
| 系列： | SPM™ |
| 类型： | IGBT |
| 配置： | 3 相 |
| 电流： | 15A |
| 电压： | 600V |
| 电压 - 隔离： | 2500Vrms |
| 封装/外壳： | SPM27CC |
| 产品目录页面： | 1223 (CN2011-ZH PDF) |
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Mini DIP (SPM3) Application Note (2012-07-09)
7. Function and Protection Circuit
7.1 SPM Functions versus Control Power Supply Voltage
Control and gate drive power for the Mini DIP SPM is normally provided by a single 15Vdc supply that
is connected to the module Vcc and COM terminals. For proper operation this voltage should be regulated to
15V ? 10% and its current supply should be larger than 60mA for SPM only. Table 7.1 describes the behavior
of the SPM for various control supply voltages. The control supply should be well filtered with a low
impedance electrolytic capacitor and a high frequency decoupling capacitor connected closely at the Mini
DIP SPM ’s pins.
High frequency noise on the supply might cause the internal control IC to malfunction and generate
erroneous fault signals. To avoid these problems, the maximum ripple on the supply should be less than ±
1V/ ? s. In addition, it may be necessary to connect a 24V, 0.5W zener diode across the control supply to
prevent surge destruction under severe conditions.
The voltage at the module’s COM terminal is different from that at the N power terminal by the drop
across the sensing resistor. It is very important that all control circuits and power supplies be referred to this
point and not to the N terminal. If circuits are improperly connected, the additional current flowing through the
sense resistor might cause improper operation of the short-circuit protection function. In general, it is best
practice to make the common reference (COM) a ground plane in the PCB layout.
The main control power supply is also connected to the bootstrap circuits that are used to establish the
floating supplies for the high side gate drives.
When control supply voltage (V CC and V BS ) falls down under UVLO (Under Voltage Lock Out) level,
IGBT will turn OFF while ignoring the input signal. To prevent noise from interrupting this function, built-in
3 ? sec filter is installed in both HVIC and LVIC.
? 2008
FAIRCHILD SEMICONDUCTOR - Smart Power Module
29
相关PDF资料 |
PDF描述 |
|---|---|
| FSBB15CH60F | MODULE SPM 600V SPM27-CA |
| FSBB20CH60CL | SMART POWER MODULE 20A SPM27-CB |
| FSBB20CH60CT | MODULE ADV MOTION SPM SPM27-CC |
| FSBB20CH60C | MODULE MOTION-SPM 600V SPM27-CC |
| FSBB20CH60SL | MODULE SPM 600V 20A SPM27-CA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FSBB15CH60C | 制造商:Fairchild Semiconductor Corporation 功能描述:Transistor |
| FSBB15CH60F | 功能描述:IGBT 晶体管 600V SPM RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FSBB20CH60 | 功能描述:IGBT 模块 HIGH_POWER RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSBB20CH60B | 功能描述:IGBT 模块 600V -20A 3-phase RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSBB20CH60BT | 功能描述:IGBT 模块 600V -20A 3-phase RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
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