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| 型号： | FSBB15CH60C |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 39/64页 |
| 文件大小： | 0K |
| 描述： | IC POWER MOD SPM 600V SPM27CC |
| 标准包装： | 10 |
| 系列： | SPM™ |
| 类型： | IGBT |
| 配置： | 3 相 |
| 电流： | 15A |
| 电压： | 600V |
| 电压 - 隔离： | 2500Vrms |
| 封装/外壳： | SPM27CC |
| 产品目录页面： | 1223 (CN2011-ZH PDF) |
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Mini DIP (SPM3) Application Note (2012-07-09)
Quiescent current to the high-side circuit in the IC
Level-shift charge required by level-shifters in the IC
Leakage current in the bootstrap diode
C BS capacitor leakage current (ignored for non-electrolytic capacitors)
Bootstrap diode reverse recovery charge
Practically, 1mA of I leak is recommended for Mini DIP SPM. By taking consideration of dispersion and
reliability, the capacitance is generally selected to be 2~3 times of the calculated one. The C BS is only
charged when the high-side IGBT is off and the V S voltage is pulled down to ground. Therefore, the on-time
of the low-side IGBT must be sufficient to ensure that the charge drawn from the C BS capacitor can be fully
replenished. Hence, inherently there is a minimum on-time of the low-side IGBT (or off-time of the high-side
IGBT).
The bootstrap capacitor should always be placed as close to the pins of the SPM as possible. At least
one low ESR capacitor should be used to provide good local de-coupling. For example, a separate ceramic
capacitor close to the SPM is essential, if an electrolytic capacitor is used for the bootstrap capacitor. If the
bootstrap capacitor is either a ceramic or tantalum type, it should be adequate for local decoupling.
8.4 Built in Bootstrap Diode including around 15 ? Resistance characteristics
From Mini DIP SPM released in Q1, 2007, built in bootstrap diode will be incorporated. When high side
IGBT or diode conducts, this bootstrap diode block up the entire bus voltage. In Mini DIP SPM, the maximum
rating of power supply is 450V. The actual voltage applied on the diode is 500V by adding a surge voltage of
about 50V. Hence the withstand voltage of bootstrap diode is more than 600V include 100V margin.
Recovery characteristics are less than max. 120ns to minimize the amount of charge that is fed back from
the bootstrap capacitor into the V CC supply. Similarly, the high voltage reverse leakage current is important if
the capacitor has to store a charge for long periods of time.
Specially, built in bootstrap diode includes around 15 ? resistance characteristics. This characteristics
are used to slow down the dV BS /dt and it also determines the time to charge the bootstrap capacitor.
? 2008
FAIRCHILD SEMICONDUCTOR - Smart Power Module
39
相关PDF资料 |
PDF描述 |
|---|---|
| FSBB15CH60F | MODULE SPM 600V SPM27-CA |
| FSBB20CH60CL | SMART POWER MODULE 20A SPM27-CB |
| FSBB20CH60CT | MODULE ADV MOTION SPM SPM27-CC |
| FSBB20CH60C | MODULE MOTION-SPM 600V SPM27-CC |
| FSBB20CH60SL | MODULE SPM 600V 20A SPM27-CA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FSBB15CH60C | 制造商:Fairchild Semiconductor Corporation 功能描述:Transistor |
| FSBB15CH60F | 功能描述:IGBT 晶体管 600V SPM RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| FSBB20CH60 | 功能描述:IGBT 模块 HIGH_POWER RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSBB20CH60B | 功能描述:IGBT 模块 600V -20A 3-phase RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| FSBB20CH60BT | 功能描述:IGBT 模块 600V -20A 3-phase RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
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