参数资料
型号: MT42L64M32D1KL-3 IT:A
厂商: Micron Technology Inc
文件页数: 119/164页
文件大小: 0K
描述: IC DDR2 SDRAM 2GBIT 168FBGA
标准包装: 1,000
格式 - 存储器: RAM
存储器类型: 移动 LPDDR2 SDRAM
存储容量: 2G(64M x 32)
速度: 333MHz
接口: 并联
电源电压: 1.14 V ~ 1.3 V
工作温度: -25°C ~ 85°C
封装/外壳: 168-WFBGA
供应商设备封装: 168-FBGA(12x12)
包装: 散装
2Gb: x16, x32 Mobile LPDDR2 SDRAM S4
AC and DC Logic Input Measurement Levels for Single-Ended
Signals
AC and DC Logic Input Measurement Levels for Single-Ended Signals
Table 63: Single-Ended AC and DC Input Levels for CA and CS# Inputs
LPDDR2-1066 t o LPDDR2-466 LPDDR2-400 to LPDDR2-200
Symbol
V IHCA(AC)
V ILCA(AC)
V IHCA(DC)
V ILCA(DC)
V REFCA(DC)
Parameter
AC input logic HIGH
AC input logic LOW
DC input logic HIGH
DC input logic LOW
Reference voltage for
Min
V REF + 0.220
Note 2
V REF + 0.130
V SSCA
0.49 × V DDCA
Max
Note 2
V REF - 0.220
V DDCA
V REF - 0.130
0.51 × V DDCA
Min
V REF + 0.300
Note 2
V REF + 0.200
V SSCA
0.49 × V DDCA
Max
Note 2
V REF - 0.300
V DDCA
V REF - 0.200
0.51 × V DDCA
Unit
V
V
V
V
V
Notes
1, 2
1, 2
1
1
3, 4
CA and CS# inputs
Notes:
1. For CA and CS# input-only pins. V REF = V REFCA(DC) .
2. See Figure 91 (page 130).
3. The AC peak noise on V REFCA could prevent V REFCA from deviating more than ±1% V DDCA
from V REFCA(DC) (for reference, approximately ±12mV).
4. For reference, approximately V DDCA /2 ±12mV.
Table 64: Single-Ended AC and DC Input Levels for CKE
Symbol
V IHCKE
V ILCKE
Parameter
CKE input HIGH level
CKE input LOW level
Min
0.8 × V DDCA
Note 1
Max
Note 1
0.2 × V DDCA
Unit
V
V
Notes
1
1
Note:
1. See Figure 91 (page 130).
Table 65: Single-Ended AC and DC Input Levels for DQ and DM
LPDDR2-1066 t o LPDDR2-466 LPDDR2-400 to LPDDR2-200
Symbol
V IHDQ(AC)
V ILDQ(AC)
V IHDQ(DC)
V ILDQ(DC)
V REFDQ(DC)
Parameter
AC input logic HIGH
AC input logic LOW
DC input logic HIGH
DC input logic LOW
Reference voltage for
Min
V REF + 0.220
Note 2
V REF + 0.130
V SSQ
0.49 × V DDQ
Max
Note 2
V REF - 0.220
V DDQ
V REF - 0.130
0.51 × V DDQ
Min
V REF + 0.300
Note 2
V REF + 0.200
V SSQ
0.49 × V DDQ
Max
Note 2
V REF - 0.300
V DDQ
V REF - 0.200
0.51 × V DDQ
Unit
V
V
V
V
V
Notes
1, 2
1, 2
1
1
3, 4
DQ and DM inputs
Notes:
1. For DQ input-only pins. V REF = V REFDQ(DC) .
2. See Figure 91 (page 130).
3. The AC peak noise on V REFDQ could prevent V REFDQ from deviating more than ±1% V DDQ
from V REFDQ(DC) (for reference, approximately ±12mV).
4. For reference, approximately. V DDQ /2 ±12mV.
PDF: 09005aef83f3f2eb
2gb_mobile_lpddr2_s4_g69a.pdf – Rev. N 3/12 EN
119
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2010 Micron Technology, Inc. All rights reserved.
相关PDF资料
PDF描述
GSC60DTEI CONN EDGECARD 120POS .100 EYELET
MT42L64M32D1KL-25 IT:A IC DDR2 SDRAM 2GBIT 168FBGA
IDT71V67803S133BQG8 IC SRAM 9MBIT 133MHZ 165FBGA
IDT71V65803S150PFG IC SRAM 9MBIT 150MHZ 100TQFP
IDT71V67903S85BQI8 IC SRAM 9MBIT 85NS 165FBGA
相关代理商/技术参数
参数描述