参数资料
型号: MT42L64M32D1KL-3 IT:A
厂商: Micron Technology Inc
文件页数: 124/164页
文件大小: 0K
描述: IC DDR2 SDRAM 2GBIT 168FBGA
标准包装: 1,000
格式 - 存储器: RAM
存储器类型: 移动 LPDDR2 SDRAM
存储容量: 2G(64M x 32)
速度: 333MHz
接口: 并联
电源电压: 1.14 V ~ 1.3 V
工作温度: -25°C ~ 85°C
封装/外壳: 168-WFBGA
供应商设备封装: 168-FBGA(12x12)
包装: 散装
2Gb: x16, x32 Mobile LPDDR2 SDRAM S4
AC and DC Logic Input Measurement Levels for Differential
Signals
2. For CK and CK#, use V IH /V IL(AC) of CA and V REFCA ; for DQS and DQS#, use V IH /V IL(AC) of DQ
and V REFDQ . If a reduced AC HIGH or AC LOW is used for a signal group, the reduced
voltage level also applies.
3. Used to define a differential signal slew rate.
Table 67: CK/CK# and DQS/DQS# Time Requirements Before Ringback
( t DVAC)
Slew Rate (V/ns)
> 4.0
4.0
3.0
2.0
1.8
1.6
1.4
1.2
1.0
< 1.0
t DVAC
(ps) at V IH /V ILdiff(AC) =
440mV
Min
175
170
167
163
162
161
159
155
150
150
t DVAC
(ps) at V IH /V ILdiff(AC) =
600mV
Min
75
57
50
38
34
29
22
13
0
0
Single-Ended Requirements for Differential Signals
Each individual component of a differential signal (CK, CK#, DQS, and DQS#) must also
comply with certain requirements for single-ended signals.
CK and CK# must meet V SEH(AC)min /V SEL(AC)max in every half cycle. DQS, DQS# must
meet V SEH(AC)min /V SEL(AC)max in every half cycle preceding and following a valid transi-
tion.
The applicable AC levels for CA and DQ differ by speed bin.
PDF: 09005aef83f3f2eb
2gb_mobile_lpddr2_s4_g69a.pdf – Rev. N 3/12 EN
124
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2010 Micron Technology, Inc. All rights reserved.
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