参数资料
型号: MT42L64M32D1KL-3 IT:A
厂商: Micron Technology Inc
文件页数: 141/164页
文件大小: 0K
描述: IC DDR2 SDRAM 2GBIT 168FBGA
标准包装: 1,000
格式 - 存储器: RAM
存储器类型: 移动 LPDDR2 SDRAM
存储容量: 2G(64M x 32)
速度: 333MHz
接口: 并联
电源电压: 1.14 V ~ 1.3 V
工作温度: -25°C ~ 85°C
封装/外壳: 168-WFBGA
供应商设备封装: 168-FBGA(12x12)
包装: 散装
2Gb: x16, x32 Mobile LPDDR2 SDRAM S4
Refresh Requirements
t DQSS,(max,derated)
= 1.25 - ( t JIT(per),act,max - t JIT(per),allowed,max)/ t CK(avg) =
1.25 - (193 - 100)/2500 = 1.2128 t CK(avg).
Refresh Requirements
Table 85: Refresh Requirement Parameters (Per Density)
Parameter
Symbol
64Mb
128Mb 256Mb 512Mb
1Gb
2Gb
4Gb
8Gb
Unit
Number of banks
4
4
4
4
8
8
8
8
Refresh window: T CASE ≤ 85?
Refresh window:
t REFW
t REFW
32
8
32
8
32
8
32
8
32
8
32
8
32
8
32
8
ms
ms
85?C < T CASE ≤ 105?C
Required number of REFRESH
R
2048
2048
4096
4096
4096
8192
8192
8192
commands (MIN)
Average time be-
REFab
t REFI
15.6
15.6
7.8
7.8
7.8
3.9
3.9
3.9
μ s
tween REFRESH com- REFpb
mands (for reference
t REFIpb
(REFpb not supported below 1Gb)
0.975
0.4875
0.4875
0.4875
μ s
only) T CASE ≤ 85?C
Refresh cycle time
t RFCab
90
90
90
90
130
130
130
210
ns
Per-bank REFRESH cycle time
t RFCpb
na
60
60
60
90
ns
Burst REFRESH window =
t REFBW
2.88
2.88
2.88
2.88
4.16
4.16
4.16
6.72
μ s
4 × 8 × t RFCab
PDF: 09005aef83f3f2eb
2gb_mobile_lpddr2_s4_g69a.pdf – Rev. N 3/12 EN
141
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2010 Micron Technology, Inc. All rights reserved.
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