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参数资料
| 型号： | MT48H32M16LFB4-75B IT:C |
| 厂商： | Micron Technology Inc |
| 文件页数： | 16/85页 |
| 文件大小： | 0K |
| 描述： | IC SDRAM 512MB 54VFBGA |
| 标准包装： | 1,000 |
| 格式 - 存储器： | RAM |
| 存储器类型： | 移动 SDRAM |
| 存储容量： | 512M（32Mx16） |
| 速度： | 133MHz |
| 接口： | 并联 |
| 电源电压： | 1.7 V ~ 1.95 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 54-VFBGA |
| 供应商设备封装： | 54-VFBGA（8x8） |
| 包装： | 散装 |
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512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
Electrical Specifications – I DD Parameters
Electrical Specifications – I DD Parameters
Table 7: I DD Specifications and Conditions, –40?C to 85?C (x16)
Note 1 applies to all parameters and conditions; V DD /V DDQ = 1.70–1.95V
Max
Parameter/Condition
Operating current: Active mode; Burst = 1; READ or WRITE; t RC = t RC
Symbol
I DD1
-6
90
-75
80
Units
mA
Notes
2, 3, 4
(MIN)
Standby current: Power-down mode; All banks idle; CKE = LOW
Standby current: Non-power-down mode; All banks idle; CKE = HIGH
Standby current: Active mode; CKE = LOW; CS# = HIGH; All banks ac-
I DD2P
I DD2N
I DD3P
300
10
5
300
10
5
μ A
mA
mA
5
3
4, 6
tive; No accesses in progress
Standby current: Active mode; CKE = HIGH; CS# = HIGH; All banks ac-
tive after t RCD met; No accesses in progress
Operating current: Burst mode; READ or WRITE; All banks active, half
I DD3N
I DD4
20
100
18
90
mA
mA
3, 4, 6
2, 3, 4
of DQ toggling every cycle
Auto refresh current: CKE = HIGH; CS# = HIGH
Deep power-down
t RFC
t RFC
= 110ns
= 7.8125 μ s
I DD5
I DD6
I ZZ
95
3
10
95
3
10
mA
mA
μ A
2, 3, 4, 6
2, 3, 4, 7
5, 8
Table 8: I DD Specifications and Conditions, –40?C to 85?C (x32)
Note 1 applies to all parameters and conditions; V DD /V DDQ = 1.70–1.95V
Max
Parameter/Condition
Symbol
-6
-75
Units
Notes
Operating current: Active mode; Burst = 1; READ or WRITE;
t RC (MIN)
t RC
=
I DD1
90
80
mA
2, 3, 4
Standby current: Power-down mode; All banks idle; CKE = LOW
Standby current: Non-power-down mode; All banks idle; CKE =
I DD2P
I DD2N
300
10
300
10
μ A
mA
5
3
HIGH
Standby current: Active mode; CKE = LOW; CS# = HIGH; All banks
I DD3P
5
5
mA
4, 6
active; No accesses in progress
Standby current: Active mode; CKE = HIGH; CS# = HIGH; All banks
active after t RCD met; No accesses in progress
Operating current: Burst mode; READ or WRITE; All banks active,
I DD3N
I DD4
20
105
18
95
mA
mA
3, 4, 6
2, 3, 4
half DQ toggling every cycle
Auto refresh current: CKE = HIGH; CS# =
HIGH
Deep power-down
t RFC
t RFC
= 110ns
= 7.8125 μ s
I DD5
I DD6
I ZZ
95
3
10
95
3
10
mA
mA
μ A
2, 3, 4, 6
2, 3, 4, 7
5, 8
PDF: 09005aef8459c827
512mb_mobile_sdram_y67m_at.pdf – Rev. B 3/11 EN
16
Micron Technology, Inc. reserves the right to change products or specifications without notice.
? 2011 Micron Technology, Inc. All rights reserved.
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