参数资料
型号: MT48H32M16LFB4-75B IT:C
厂商: Micron Technology Inc
文件页数: 70/85页
文件大小: 0K
描述: IC SDRAM 512MB 54VFBGA
标准包装: 1,000
格式 - 存储器: RAM
存储器类型: 移动 SDRAM
存储容量: 512M(32Mx16)
速度: 133MHz
接口: 并联
电源电压: 1.7 V ~ 1.95 V
工作温度: -40°C ~ 85°C
封装/外壳: 54-VFBGA
供应商设备封装: 54-VFBGA(8x8)
包装: 散装
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
PRECHARGE Operation
Figure 40: Single READ Without Auto Precharge
CLK
T0
tCK
T1
tCL
T2
tCH
T3
T4
T5
T6
T7
T8
CKE
tCKS
tCMS
tCKH
tCM H
Command
ACTIVE
NOP
READ
NOP
NOP
PRECHARGE
NOP
ACTIVE
NOP
tCMS tCMH
DQM
t AS
tAH
Address
A10
t AS
t AS
Row
tAH
Row
tAH
Column m
Disable auto precharge
All banks
Single bank
Row
Row
BA0, BA1
Bank
Bank
Bank(s)
Bank
tAC
t OH
DQ
t L Z
D OUT m
tRCD
CL = 2
tHZ
tRP
tRAS
tRC
Note:
Don’t Care
Undefined
1. For this example, BL = 1, CL = 2, and the READ burst is followed by a manual PRE-
CHARGE.
PDF: 09005aef8459c827
512mb_mobile_sdram_y67m_at.pdf – Rev. B 3/11 EN
70
Micron Technology, Inc. reserves the right to change products or specifications without notice.
? 2011 Micron Technology, Inc. All rights reserved.
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