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参数资料
| 型号： | MT48H32M16LFB4-75B IT:C |
| 厂商： | Micron Technology Inc |
| 文件页数： | 76/85页 |
| 文件大小： | 0K |
| 描述： | IC SDRAM 512MB 54VFBGA |
| 标准包装： | 1,000 |
| 格式 - 存储器： | RAM |
| 存储器类型： | 移动 SDRAM |
| 存储容量： | 512M（32Mx16） |
| 速度： | 133MHz |
| 接口： | 并联 |
| 电源电压： | 1.7 V ~ 1.95 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 54-VFBGA |
| 供应商设备封装： | 54-VFBGA（8x8） |
| 包装： | 散装 |
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512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
AUTO REFRESH Operation
AUTO REFRESH Operation
The AUTO REFRESH command is used during normal operation of the device to refresh
the contents of the array. This command is nonpersistent, so it must be issued each
time a refresh is required. All active banks must be precharged prior to issuing an AUTO
REFRESH command. The AUTO REFRESH command should not be issued until the
minimum t RP is met following the PRECHARGE command. Addressing is generated by
the internal refresh controller. This makes the address bits “Don’t Care” during an AU-
TO REFRESH command.
After the AUTO REFRESH command is initiated, it must not be interrupted by any exe-
cutable command until t RFC has been met. During t RFC time, COMMAND INHIBIT or
NOP commands must be issued on each positive edge of the clock. The SDRAM re-
quires that every row be refreshed each t REF period. Providing a distributed AUTO RE-
FRESH command—calculated by dividing the refresh period ( t REF) by the number of
rows to be refreshed—meets the timing requirement and ensures that each row is re-
freshed. Alternatively, to satisfy the refresh requirement a burst refresh can be employed
after every t REF period by issuing consecutive AUTO REFRESH commands for the num-
ber of rows to be refreshed at the minimum cycle rate ( t RFC).
PDF: 09005aef8459c827
512mb_mobile_sdram_y67m_at.pdf – Rev. B 3/11 EN
76
Micron Technology, Inc. reserves the right to change products or specifications without notice.
? 2011 Micron Technology, Inc. All rights reserved.
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