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参数资料
| 型号： | MT48H32M16LFB4-75B IT:C |
| 厂商： | Micron Technology Inc |
| 文件页数： | 35/85页 |
| 文件大小： | 0K |
| 描述： | IC SDRAM 512MB 54VFBGA |
| 标准包装： | 1,000 |
| 格式 - 存储器： | RAM |
| 存储器类型： | 移动 SDRAM |
| 存储容量： | 512M（32Mx16） |
| 速度： | 133MHz |
| 接口： | 并联 |
| 电源电压： | 1.7 V ~ 1.95 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 54-VFBGA |
| 供应商设备封装： | 54-VFBGA（8x8） |
| 包装： | 散装 |
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512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
Truth Tables
Table 19: Truth Table – Current State Bank n, Command to Bank m
Notes 1–6 apply to all parameters and conditions
Current State
CS#
RAS# CAS#
WE# Command/Action
Notes
Any
Idle
Row activating, active, or
H
L
X
L
X
H
X
L
X
H
X
H
X
H
X
H
COMMAND INHIBIT (NOP/continue previous operation)
NO OPERATION (NOP/continue previous operation)
Any command otherwise supported for bank m
ACTIVE (select and activate row)
precharging
Read
(auto precharge disabled)
Write
(auto precharge disabled)
Read
(with auto precharge)
Write
(with auto precharge)
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
READ (select column and start READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start new READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start new WRITE burst)
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start new READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start new WRITE burst)
PRECHARGE
7
7
7, 10
7, 11
9
7, 12
7, 13
9
7, 8, 14
7, 8, 15
9
7, 8, 16
7, 8, 17
9
Notes:
1. This table applies when CKE n-1 was HIGH and CKE n is HIGH (Table 20 (page 37)), and
after t XSR has been met (if the previous state was self refresh).
2. This table describes alternate bank operation, except where noted; for example, the cur-
rent state is for bank n and the commands shown can be issued to bank m , assuming
that bank m is in such a state that the given command is supported. Exceptions are cov-
ered below.
3. Current state definitions:
Idle : The bank has been precharged, and t RP has been met.
Row active : A row in the bank has been activated, and t RCD has been met. No data
bursts/accesses and no register accesses are in progress.
Read : A READ burst has been initiated, with auto precharge disabled, and has not yet
terminated or been terminated.
Write : A WRITE burst has been initiated, with auto precharge disabled, and has not yet
terminated or been terminated.
PDF: 09005aef8459c827
512mb_mobile_sdram_y67m_at.pdf – Rev. B 3/11 EN
35
Micron Technology, Inc. reserves the right to change products or specifications without notice.
? 2011 Micron Technology, Inc. All rights reserved.
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