参数资料
型号: MT48H32M16LFB4-75B IT:C
厂商: Micron Technology Inc
文件页数: 42/85页
文件大小: 0K
描述: IC SDRAM 512MB 54VFBGA
标准包装: 1,000
格式 - 存储器: RAM
存储器类型: 移动 SDRAM
存储容量: 512M(32Mx16)
速度: 133MHz
接口: 并联
电源电压: 1.7 V ~ 1.95 V
工作温度: -40°C ~ 85°C
封装/外壳: 54-VFBGA
供应商设备封装: 54-VFBGA(8x8)
包装: 散装
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
Mode Register
Table 21: Burst Definition Table
Order of Accesses Within a Burst
Burst Length
2
4
Starting Column Address
A0
0
1
A1
A0
Type = Sequential
0-1
1-0
Type = Interleaved
0-1
1-0
0
0
1
1
0
1
0
1
0-1-2-3
1-2-3-0
2-3-0-1
3-0-1-2
0-1-2-3
1-0-3-2
2-3-0-1
3-2-1-0
8
A2
A1
A0
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0-1-2-3-4-5-6-7
1-2-3-4-5-6-7-0
2-3-4-5-6-7-0-1
3-4-5-6-7-0-1-2
4-5-6-7-0-1-2-3
5-6-7-0-1-2-3-4
6-7-0-1-2-3-4-5
7-0-1-2-3-4-5-6
0-1-2-3-4-5-6-7
1-0-3-2-5-4-7-6
2-3-0-1-6-7-4-5
3-2-1-0-7-6-5-4
4-5-6-7-0-1-2-3
5-4-7-6-1-0-3-2
6-7-4-5-2-3-0-1
7-6-5-4-3-2-1-0
Continuous
n = A0–An/9/8 (location 0–y)
Cn, Cn + 1, Cn + 2, Cn + 3...Cn - 1,
Cn...
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PDF: 09005aef8459c827
512mb_mobile_sdram_y67m_at.pdf – Rev. B 3/11 EN
42
Micron Technology, Inc. reserves the right to change products or specifications without notice.
? 2011 Micron Technology, Inc. All rights reserved.
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