参数资料
型号: MT48H32M16LFB4-75B IT:C
厂商: Micron Technology Inc
文件页数: 68/85页
文件大小: 0K
描述: IC SDRAM 512MB 54VFBGA
标准包装: 1,000
格式 - 存储器: RAM
存储器类型: 移动 SDRAM
存储容量: 512M(32Mx16)
速度: 133MHz
接口: 并联
电源电压: 1.7 V ~ 1.95 V
工作温度: -40°C ~ 85°C
封装/外壳: 54-VFBGA
供应商设备封装: 54-VFBGA(8x8)
包装: 散装
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
PRECHARGE Operation
Figure 38: READ Without Auto Precharge
CLK
T0
tCK
T1
tCL
T2
tCH
T3
T4
T5
T6
T7
T8
tCKS
tCKH
CKE
tCMS tCMH
Command
ACTIVE
NOP
READ
NOP
NOP
NOP
PRECHARGE
NOP
ACTIVE
tCMS tCMH
DQM
t AS
tAH
Address
A10
t AS
t AS
Row
tAH
Row
tAH
Column m
Disable auto precharge
All banks
Single bank
Row
Row
BA0, BA1
Bank
Bank
tAC
tAC
Bank(s)
tAC
Bank
tAC
tO H
tO H
tOH
tOH
DQ
tRCD
CL = 2
t L Z
D OUT m
D OUT
m+1
D OUT
m+2
tRP
D OUT
m+3
tHZ
tRAS
tRC
Don’t Care
Undefined
Note:
1. For this example, BL = 4, CL = 2, and the READ burst is followed by a manual PRE-
CHARGE.
PDF: 09005aef8459c827
512mb_mobile_sdram_y67m_at.pdf – Rev. B 3/11 EN
68
Micron Technology, Inc. reserves the right to change products or specifications without notice.
? 2011 Micron Technology, Inc. All rights reserved.
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