参数资料
型号: MT48H32M16LFB4-75B IT:C
厂商: Micron Technology Inc
文件页数: 48/85页
文件大小: 0K
描述: IC SDRAM 512MB 54VFBGA
标准包装: 1,000
格式 - 存储器: RAM
存储器类型: 移动 SDRAM
存储容量: 512M(32Mx16)
速度: 133MHz
接口: 并联
电源电压: 1.7 V ~ 1.95 V
工作温度: -40°C ~ 85°C
封装/外壳: 54-VFBGA
供应商设备封装: 54-VFBGA(8x8)
包装: 散装
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
READ Operation
Figure 17: Consecutive READ Bursts
T0
T1
T2
T3
T4
T5
T6
CLK
Command
READ
NOP
NOP
NOP
READ
NOP
NOP
X = 1 cycle
Address
Bank,
Col n
Bank,
Col b
DQ
D OUT
n
D OUT
n+1
D OUT
n+2
D OUT
n+3
D OUT
b
CL = 2
T0
T1
T2
T3
T4
T5
T6
T7
CLK
Command
READ
NOP
NOP
NOP
READ
NOP
NOP
NOP
X = 2 cycles
Address
Bank,
Col n
Bank,
Col b
DQ
D OUT
n
D OUT
n+1
D OUT
n+2
D OUT
n+3
D OUT
b
CL = 3
Transitioning data
Don’t Care
Note:
1. Each READ command can be issued to any bank. DQM is LOW.
PDF: 09005aef8459c827
512mb_mobile_sdram_y67m_at.pdf – Rev. B 3/11 EN
48
Micron Technology, Inc. reserves the right to change products or specifications without notice.
? 2011 Micron Technology, Inc. All rights reserved.
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