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参数资料
| 型号： | MT48H32M16LFB4-75B IT:C |
| 厂商： | Micron Technology Inc |
| 文件页数： | 37/85页 |
| 文件大小： | 0K |
| 描述： | IC SDRAM 512MB 54VFBGA |
| 标准包装： | 1,000 |
| 格式 - 存储器： | RAM |
| 存储器类型： | 移动 SDRAM |
| 存储容量： | 512M（32Mx16） |
| 速度： | 133MHz |
| 接口： | 并联 |
| 电源电压： | 1.7 V ~ 1.95 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 54-VFBGA |
| 供应商设备封装： | 54-VFBGA（8x8） |
| 包装： | 散装 |
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512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
Truth Tables
Table 20: Truth Table – CKE
Notes 1–4 apply to al l parameter s and conditions
Current State
Power-down
CKE n-1
L
CKE n
L
Command n
X
Action n
Maintain power-down
Notes
Self refresh
Clock suspend
Deep power-down
X
X
X
Maintain self refresh
Maintain clock suspend
Maintain deep power-down
Power-down
L
H
COMMAND INHIBIT or NOP
Exit power-down
5
Deep power-down
X
Exit deep power-down
Self refresh
Clock suspend
COMMAND INHIBIT or NOP
X
Exit self refresh
Exit clock suspend
6
7
All banks idle
All banks idle
All banks idle
Reading or writing
H
H
L
H
COMMAND INHIBIT or NOP
BURST TERMINATE
AUTO REFRESH
VALID
Table 19 (page 35)
Power-down entry
Deep power-down entry
Self refresh entry
Clock suspend entry
8
Notes:
1. CKE n is the logic state of CKE at clock edge n; CKE n-1 was the state of CKE at the previ-
ous clock edge.
2. Current state is the state of the SDRAM immediately prior to clock edge n .
3. COMMAND n is the command registered at clock edge n , and ACTION n is a result of
COMMAND n .
4. All states and sequences not shown are illegal or reserved.
5. Exiting power-down at clock edge n will put the device in the all banks idle state in time
for clock edge n + 1 (provided that t CKS is met).
6. Exiting self refresh at clock edge n will put the device in the all banks idle state after
t XSR is met. COMMAND INHIBIT or NOP commands should be issued on any clock edges
occurring during the t XSR period. A minimum of two NOP commands must be provided
during the t XSR period.
7. After exiting clock suspend at clock edge n , the device will resume operation and recog-
nize the next command at clock edge n + 1.
8. Deep power-down is a power-saving feature of this device. This command is BURST TER-
MINATE when CKE is HIGH and DEEP POWER-DOWN when CKE is LOW.
PDF: 09005aef8459c827
512mb_mobile_sdram_y67m_at.pdf – Rev. B 3/11 EN
37
Micron Technology, Inc. reserves the right to change products or specifications without notice.
? 2011 Micron Technology, Inc. All rights reserved.
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