- 您现在的位置：买卖IC网 > Datasheet目录345 > MT48H32M16LFB4-75B IT:C (Micron Technology Inc)IC SDRAM 512MB 54VFBGA Datasheet资料下载
参数资料
| 型号： | MT48H32M16LFB4-75B IT:C |
| 厂商： | Micron Technology Inc |
| 文件页数： | 44/85页 |
| 文件大小： | 0K |
| 描述： | IC SDRAM 512MB 54VFBGA |
| 标准包装： | 1,000 |
| 格式 - 存储器： | RAM |
| 存储器类型： | 移动 SDRAM |
| 存储容量： | 512M（32Mx16） |
| 速度： | 133MHz |
| 接口： | 并联 |
| 电源电压： | 1.7 V ~ 1.95 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 54-VFBGA |
| 供应商设备封装： | 54-VFBGA（8x8） |
| 包装： | 散装 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页当前第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页第71页第72页第73页第74页第75页第76页第77页第78页第79页第80页第81页第82页第83页第84页第85页
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
Extended Mode Register
Extended Mode Register
The extended mode register (EMR) controls additional functions beyond those control-
led by the mode register. These additional functions include TCSR, PASR, and output
drive strength.
The EMR is programmed via the LMR command (BA1 = 1, BA0 = 0) and retains the stor-
ed information until it is programmed again or the device loses power.
The EMR must be programmed with E[ n:7] set to 0. It must be loaded when all banks
are idle and no bursts are in progress, and the controller must wait the specified time
before initiating any subsequent operation. Violating either of these requirements re-
sults in unspecified operation. After the values are entered, the EMR settings are re-
tained even after exiting deep power-down mode.
Figure 15: Extended Mode Register Definition
BA1 BA0 A n
... A10 A9 A8 A7 A6 A5 A4 A3 A2 A1
A0
Address bus
n + 2 n + 1 n
1 0
... 10 9
Operation
8
7
6
DS
5
4 3
TCSR 1
2
1
PASR
0
Extended mode
register (Ex)
En + 2 En + 1
Mode Register Definition
E7
E6
E5
Drive Strength
0
0
1
1
0
1
0
1
Standard mode register
Status register
Extended mode register
Reserved
0
0
0
0
0
0
1
1
0
1
0
1
Full strength
1/2 strength
1/4 strength
3/4 strength
1
1
1
1
0
0
1
1
0
1
0
1
3/4 strength
Reserved
Reserved
Reserved
En
...
E10 E9
E8
E7–E0
E2
E1
E0
Partial-Array Self Refresh Coverage
0
–
0
–
0
–
0
–
0
–
Valid
–
Normal AR operation
All other states reserved
0
0
0
0
0
1
Full array
1/2 array
0
0
1
1
1
1
1
1
0
0
1
1
0
1
0
1
0
1
1/4 array
Reserved
Reserved
1/8 array
1/16 array
Reserved
Note:
1. On-die temperature sensor is used in place of TCSR. Setting these bits will have no ef-
fect.
Temperature-Compensated Self Refresh
This device includes a temperature sensor that is implemented for automatic control of
the self refresh oscillator. Programming the temperature-compensated self refresh
PDF: 09005aef8459c827
512mb_mobile_sdram_y67m_at.pdf – Rev. B 3/11 EN
44
Micron Technology, Inc. reserves the right to change products or specifications without notice.
? 2011 Micron Technology, Inc. All rights reserved.
相关PDF资料 |
PDF描述 |
|---|---|
| MT48H8M16LFB4-75 IT:K TR | IC SDRAM 128MBIT 133MHZ 54VFBGA |
| MTC100-JA2-P34 | CONTACT INSERT PIN |
| MX841BE | IC CONVERTER WHITE LED 8-SOIC |
| MXHV9910BTR | IC LED DRIVER HIGH BRIGHT 8-SOIC |
| MXN12FB12F | MOTOR BRUSHED DC 12V 2922RPM |
相关代理商/技术参数 |
参数描述 |
|---|
发布紧急采购，3分钟左右您将得到回复。