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参数资料
| 型号： | MT48H32M16LFB4-75B IT:C |
| 厂商： | Micron Technology Inc |
| 文件页数： | 7/85页 |
| 文件大小： | 0K |
| 描述： | IC SDRAM 512MB 54VFBGA |
| 标准包装： | 1,000 |
| 格式 - 存储器： | RAM |
| 存储器类型： | 移动 SDRAM |
| 存储容量： | 512M（32Mx16） |
| 速度： | 133MHz |
| 接口： | 并联 |
| 电源电压： | 1.7 V ~ 1.95 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 54-VFBGA |
| 供应商设备封装： | 54-VFBGA（8x8） |
| 包装： | 散装 |
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512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
General Description
General Description
The 512Mb Mobile LPSDR is a high-speed CMOS, dynamic random-access memory
containing 536,870,912-bits. It is internally configured as a quad-bank DRAM with a
synchronous interface (all signals are registered on the positive edge of the clock signal,
CLK). Each of the x16’s 134,217,728-bit banks is organized as 8192 rows by 1K columns
by 16 bits. Each of the x32’s 134,217,728-bit banks is organized as 8192 rows by 512 col-
umns by 32 bits. In the reduced page size option, each of the x32’s 134,217,728-bit
banks is organized as 16,384 rows by 256 columns by 32 bits.
Mobile LPSDR offers substantial advances in DRAM operating performance, including
the ability to synchronously burst data at a high data rate with automatic column-ad-
dress generation, the ability to interleave between internal banks in order to hide pre-
charge time, and the capability to randomly change column addresses on each clock cy-
cle during a burst access.
Note:
1. Throughout the data sheet, various figures and text refer to DQs as DQ. DQ should be
interpreted as any and all DQ collectively, unless specifically stated otherwise. Addition-
ally, the x16 is divided into two bytes: the lower byte and the upper byte. For the lower
byte (DQ[7:0]), DQM refers to LDQM. For the upper byte (DQ[15:8]), DQM refers to
UDQM. The x32 is divided into four bytes. For DQ[7:0], DQM refers to DQM0. For
DQ[15:8], DQM refers to DQM1. For DQ[23:16], DQM refers to DQM2, and for
DQ[31:24], DQM refers to DQM3.
2. Complete functionality is described throughout the document; any page or diagram
may have been simplified to convey a topic and may not be inclusive of all require-
ments.
3. Any specific requirement takes precedence over a general statement.
PDF: 09005aef8459c827
512mb_mobile_sdram_y67m_at.pdf – Rev. B 3/11 EN
7
Micron Technology, Inc. reserves the right to change products or specifications without notice.
? 2011 Micron Technology, Inc. All rights reserved.
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