参数资料
型号: MT46H16M32LFB5-6IT:C
元件分类: DRAM
英文描述: 16M X 32 DDR DRAM, PBGA90
封装: 13 X 8 MM, GREEN, PLASTIC, VFBGA-90
文件页数: 32/95页
文件大小: 3228K
Figure 11: WRITE Command
CS#
WE#
CAS#
RAS#
CKE
Column
A10
BA0, BA1
HIGH
EN AP
DIS AP
Bank
CK
CK#
Don’t Care
Address
Note: 1. EN AP = enable auto precharge; DIS AP = disable auto precharge.
PRECHARGE
The PRECHARGE command is used to deactivate the open row in a particular bank or
the open row in all banks. The bank(s) will be available for a subsequent row access a
specified time (tRP) after the PRECHARGE command is issued. Input A10 determines
whether one or all banks will be precharged, and in the case where only one bank is
precharged, inputs BA0 and BA1 select the bank. Otherwise, BA0 and BA1 are treated as
“Don’t Care.” After a bank has been precharged, it is in the idle state and must be activa-
ted prior to any READ or WRITE commands being issued to that bank.
Micron Confidential and Proprietary
Advance
512Mb: x16, x32 Mobile LPDDR SDRAM
Commands
PDF: 09005aef83dd2b3e
t67m_512mb_mobile_lpddr.pdf - Rev. B 2/10 EN
38
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2009 Micron Technology, Inc. All rights reserved.
相关PDF资料
PDF描述
ML1I-65656L-100CB 32K X 8 STANDARD SRAM, 100 ns, CDIP28
M95160-MB6TP 2K X 8 SPI BUS SERIAL EEPROM, DSO8
M95160-WMB3T 2K X 8 SPI BUS SERIAL EEPROM, DSO8
MT45W2MV16BAFB-601WT 2M X 16 PSEUDO STATIC RAM, 60 ns, PBGA54
MT45W2MV16BAFB-706LIT 2M X 16 PSEUDO STATIC RAM, 70 ns, PBGA54
相关代理商/技术参数
参数描述