参数资料
型号: MT46H16M32LFB5-6IT:C
元件分类: DRAM
英文描述: 16M X 32 DDR DRAM, PBGA90
封装: 13 X 8 MM, GREEN, PLASTIC, VFBGA-90
文件页数: 65/95页
文件大小: 3228K
Figure 30: Data Output Timing – tDQSQ, tQH, and Data Valid Window (x32)
DQ (Last data valid)4
DQ4
DQS0/DQS1/DQS2/DQS3
DQ (Last data valid)
DQ (First data no longer valid)
DQ (First data no longer valid)4
DQ and DQS, collectively6,7
CK
CK#
Byte
0
Byte
1
Byte
2
Byte
3
Data valid
window
Data valid
window
Data valid
window
Data valid
window
T1
T2
T2n
T3
T3n
T4
tHP1
tDQSQ2,3
T2
T2n
T3
T3n
T2
T2n
T3
T3n
T2
T2n
T3
T3n
tQH5
tHP1
tQH5
Notes: 1. tHP is the lesser of tCL or tCH clock transition collectively when a bank is active.
2. DQ transitioning after DQS transitions define the tDQSQ window.
3. tDQSQ is derived at each DQS clock edge and is not cumulative over time; it begins with
DQS transition and ends with the last valid DQ transition.
4. Byte 0 is DQ[7:0], byte 1 is DQ[15:8], byte 2 is DQ[23:16], byte 3 is DQ[31:24].
5. tQH is derived from tHP: tQH = tHP - tQHS.
6. The data valid window is derived for each DQS transition and is tQH - tDQSQ.
7. DQ[7:0] and DQS0 for byte 0; DQ[15:8] and DQS1 for byte 1; DQ[23:16] and DQS2 for
byte 2; DQ[31:23] and DQS3 for byte 3.
Micron Confidential and Proprietary
Advance
512Mb: x16, x32 Mobile LPDDR SDRAM
READ Operation
PDF: 09005aef83dd2b3e
t67m_512mb_mobile_lpddr.pdf - Rev. B 2/10 EN
68
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2009 Micron Technology, Inc. All rights reserved.
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