- 您现在的位置：买卖IC网 > PDF目录262949 > MT46H16M32LFB5-6IT:C 16M X 32 DDR DRAM, PBGA90 PDF资料下载
参数资料
| 型号： | MT46H16M32LFB5-6IT:C |
| 元件分类： | DRAM |
| 英文描述： | 16M X 32 DDR DRAM, PBGA90 |
| 封装： | 13 X 8 MM, GREEN, PLASTIC, VFBGA-90 |
| 文件页数： | 34/95页 |
| 文件大小： | 3228K |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页当前第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页第71页第72页第73页第74页第75页第76页第77页第78页第79页第80页第81页第82页第83页第84页第85页第86页第87页第88页第89页第90页第91页第92页第93页第94页第95页
List of Tables
Table 1: Key Timing Parameters (CL = 3) .......................................................................................................... 1
Table 2: Configuration Addressing .................................................................................................................. 2
Table 3: Ball Descriptions .............................................................................................................................. 12
Table 4: Absolute Maximum Ratings .............................................................................................................. 16
Table 5: AC/DC Electrical Characteristics and Operating Conditions ............................................................... 16
Table 6: Capacitance (x16, x32) ...................................................................................................................... 18
Table 7: IDD Specifications and Conditions, –40°C to +85°C (x16) ..................................................................... 19
Table 8: IDD Specifications and Conditions, –40°C to +85°C (x32) ..................................................................... 20
Table 9: IDD Specifications and Conditions, –40°C to +105°C (x16) ................................................................... 21
Table 10: IDD Specifications and Conditions, –40°C to +105°C (x32) ................................................................. 22
Table 11: IDD6 Specifications and Conditions .................................................................................................. 23
Table 12: Electrical Characteristics and Recommended AC Operating Conditions ............................................ 25
Table 13: Target Output Drive Characteristics (Full Strength) .......................................................................... 30
Table 14: Target Output Drive Characteristics (Three-Quarter Strength) .......................................................... 31
Table 15: Target Output Drive Characteristics (One-Half Strength) ................................................................. 32
Table 16: Truth Table – Commands ............................................................................................................... 34
Table 17: DM Operation Truth Table ............................................................................................................. 35
Table 18: Truth Table – Current State Bank n – Command to Bank n ............................................................... 41
Table 19: Truth Table – Current State Bank n – Command to Bank m .............................................................. 42
Table 20: Truth Table – CKE .......................................................................................................................... 45
Table 21: Burst Definition Table .................................................................................................................... 51
Micron Confidential and Proprietary
Advance
512Mb: x16, x32 Mobile LPDDR SDRAM
PDF: 09005aef83dd2b3e
t67m_512mb_mobile_lpddr.pdf - Rev. B 2/10 EN
4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2009 Micron Technology, Inc. All rights reserved.
相关PDF资料 |
PDF描述 |
|---|---|
| ML1I-65656L-100CB | 32K X 8 STANDARD SRAM, 100 ns, CDIP28 |
| M95160-MB6TP | 2K X 8 SPI BUS SERIAL EEPROM, DSO8 |
| M95160-WMB3T | 2K X 8 SPI BUS SERIAL EEPROM, DSO8 |
| MT45W2MV16BAFB-601WT | 2M X 16 PSEUDO STATIC RAM, 60 ns, PBGA54 |
| MT45W2MV16BAFB-706LIT | 2M X 16 PSEUDO STATIC RAM, 70 ns, PBGA54 |
相关代理商/技术参数 |
参数描述 |
|---|
发布紧急采购，3分钟左右您将得到回复。