参数资料
型号: MT46H16M32LFB5-6IT:C
元件分类: DRAM
英文描述: 16M X 32 DDR DRAM, PBGA90
封装: 13 X 8 MM, GREEN, PLASTIC, VFBGA-90
文件页数: 93/95页
文件大小: 3228K
Figure 52: Deep Power-Down Mode
tIS
All banks idle with no
activity on the data bus
Exit deep power-down mode
Enter deep power-down mode
CKE
CK
CK#
Command1
DPD2
(
)
(
)
(
)
(
)
(
)
(
)
(
)
(
)
(
)
(
)
NOP
PRE3
T0
T1
T2
Ta01
Ta1
Ta2
NOP
Don’t Care
tCKE
Ta3
T = 200s
Notes: 1. Clock must be stable prior to CKE going HIGH.
2. DPD = deep power-down.
3. Upon exit of deep power-down mode, a full DRAM initialization sequence is required.
Micron Confidential and Proprietary
Advance
512Mb: x16, x32 Mobile LPDDR SDRAM
Power-Down
PDF: 09005aef83dd2b3e
t67m_512mb_mobile_lpddr.pdf - Rev. B 2/10 EN
93
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2009 Micron Technology, Inc. All rights reserved.
相关PDF资料
PDF描述
ML1I-65656L-100CB 32K X 8 STANDARD SRAM, 100 ns, CDIP28
M95160-MB6TP 2K X 8 SPI BUS SERIAL EEPROM, DSO8
M95160-WMB3T 2K X 8 SPI BUS SERIAL EEPROM, DSO8
MT45W2MV16BAFB-601WT 2M X 16 PSEUDO STATIC RAM, 60 ns, PBGA54
MT45W2MV16BAFB-706LIT 2M X 16 PSEUDO STATIC RAM, 70 ns, PBGA54
相关代理商/技术参数
参数描述