参数资料
型号: MT46H16M32LFB5-6IT:C
元件分类: DRAM
英文描述: 16M X 32 DDR DRAM, PBGA90
封装: 13 X 8 MM, GREEN, PLASTIC, VFBGA-90
文件页数: 83/95页
文件大小: 3228K
Figure 44: Bank Read – With Auto Precharge
CK
CK#
CKE
A10
BA0, BA1
tCK
tCH
tCL
tIS
tIH
tIS
tIH
tIS tIH
Row
tRCD
tRAS
tRC
tRP
CL = 2
DM
T0
T1
T2
T3
T4
T5
T5n
T6n
T6
T7
T8
DQ4,5
DQS4
Case 1: tAC (MIN) and tDQSCK (MIN)
Case 2: tAC (MAX) and tDQSCK (MAX)
DQ4,5
DQS4
tHZ (MAX)
NOP1
Command
ACTIVE
Row
Col n
READ2
Bank x
Row
Bank x
ACTIVE
Bank x
NOP1
Don’t Care
Transitioning Data
Address
NOP1
tRPRE
tDQSCK (MAX)
tAC (MAX)
DOUT
tDQSCK (MIN)
tAC (MIN)
tRPST
tLZ (MIN)
tRPRE
tRPST
tLZ (MIN)
Note 3
Notes: 1. NOP commands are shown for ease of illustration; other commands may be valid at
these times.
2. BL = 4 in the case shown.
3. Enable auto precharge.
4. Refer to Figure 29 (page 67) and Figure 30 (page 68) for detailed DQS and DQ timing.
5. DOUT n = data-out from column n.
Micron Confidential and Proprietary
Advance
512Mb: x16, x32 Mobile LPDDR SDRAM
Auto Precharge
PDF: 09005aef83dd2b3e
t67m_512mb_mobile_lpddr.pdf - Rev. B 2/10 EN
84
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2009 Micron Technology, Inc. All rights reserved.
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