参数资料
型号: MT46H16M32LFB5-6IT:C
元件分类: DRAM
英文描述: 16M X 32 DDR DRAM, PBGA90
封装: 13 X 8 MM, GREEN, PLASTIC, VFBGA-90
文件页数: 82/95页
文件大小: 3228K
Concurrent Auto Precharge
This device supports concurrent auto precharge such that when a READ with auto pre-
charge is enabled or a WRITE with auto precharge is enabled, any command to another
bank is supported, as long as that command does not interrupt the read or write data
transfer already in process. This feature enables the precharge to complete in the bank
in which the READ or WRITE with auto precharge was executed, without requiring an
explicit PRECHARGE command, thus freeing the command bus for operations in other
banks. During the access period of a READ or WRITE with auto precharge, only ACTIVE
and PRECHARGE commands can be issued to other banks. During the precharge peri-
od, ACTIVE, PRECHARGE, READ, and WRITE commands can be issued to other banks.
In either situation, all other related limitations apply (for example, contention between
READ data and WRITE data must be avoided).
Micron Confidential and Proprietary
Advance
512Mb: x16, x32 Mobile LPDDR SDRAM
Auto Precharge
PDF: 09005aef83dd2b3e
t67m_512mb_mobile_lpddr.pdf - Rev. B 2/10 EN
83
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2009 Micron Technology, Inc. All rights reserved.
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