参数资料
型号: MT48V8M16LFB4-75M:G
元件分类: DRAM
英文描述: 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
封装: 8 X 8 MM, LEAD FREE, VFBGA-54
文件页数: 10/80页
文件大小: 2775K
PDF: 09005aef807f4885/Source: 09005aef8071a76b
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128Mbx16x32Mobile_2.fm - Rev. M 1/09 EN
18
2001 Micron Technology, Inc. All rights reserved.
128Mb: x16, x32 Mobile SDRAM
Register Definition
Figure 7:
Mode Register Definition
M3 = 0
1
2
4
8
Reserved
M3 = 1
1
2
4
8
Reserved
0
1
Burst Type
Sequential
Interleaved
CAS Latency
Reserved
1
2
3
Reserved
Burst Length
M0
0
1
0
1
0
1
0
1
M1
0
1
0
1
M2
0
1
M3
M4
0
1
0
1
0
1
0
1
M5
0
1
0
1
M6
0
1
0
1
0
Mode
Register (Mx)
Address Bus
9
7
6
5
4
3
8
2
1
Burst Length
CAS Latency BT
Op Mode
WB
Reserved
A11
M11
A10
M10
A9
M9
A8
M8
A7
M7
A6
M6
A5
M5
A4
M4
A3
M3
A2
M2
A1
M1
A0
M0
10
11
12
BA0
M12
BA1
M13
MR
13
0
M11
0
M10
0
M9
Valid
M8
0
M7
0
M6–M0
Valid
Operating Mode
Normal Operation
All other states reserved
Mode Register Definition
Program Mode Register
Program Extended Mode Register
M13 M12
0
Write Burst Mode
Programmed Burst Length
Single Location Access
M9
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相关代理商/技术参数
参数描述
MT48V8M16LFB4-8 ITG 制造商:Micron Technology Inc 功能描述:DRAM Chip Mobile SDRAM 128M-Bit 8Mx16 2.5V 54-Pin VFBGA Tray