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128Mbx16x32Mobile_2.fm - Rev. M 1/09 EN
53
2001 Micron Technology, Inc. All rights reserved.
128Mb: x16, x32 Mobile SDRAM
Electrical Specifications
Table 17:
Electrical Characteristics and Recommended AC Operating Conditions
Ac Characteristics
Symbol
-75M
-8
-10
Units
Notes
Parameter
Min
Max
Min
Max
Min
Max
Access time from CLK (positive
edge)
CL = 3
tAC (3)
–
5.4
–
7
–
7
ns
CL = 2
tAC (2)
–
6–
8–
8
ns
CL = 1
tAC (1)
–
na
–
19
–
22
ns
Address hold time
tAH
0.8
–
1–
ns
Address setup time
tAS
1.5
–
2.5
–
2.5
–
ns
CLK high-level width
tCH
3–
ns
CLK low-level width
tCL
2.5
–
3–
ns
Clock cycle time
CL = 3
tCK (3)
7.5
–
8
–
10
–
ns
CL = 2
tCK (2)
9.6
–
9.6
–
12
–
ns
CL = 1
tCK (1)
n/a
–
20
–
25
–
ns
CKE hold time
tCKH
1
–1
–
ns
CKE setup time
tCKS
2.5
–
2.5
–
2.5
–
ns
CS#, RAS#, CAS#, WE#, DQM hold time
tCMH
0.8
–1
–
ns
CS#, RAS#, CAS#, WE#, DQM setup time
tCMS
1.5
–
2.5
–
2.5
–
ns
Data-in hold time
tDH
0.8
–
1–
ns
Data-in setup time
tDS
1.5
–
2.5
–
2.5
–
ns
Data-out High-Z time
CL = 3
tHZ (3)
–
5.4
–
7
–
7
ns
CL = 2
tHZ (2)
–
6–
8–
8
ns
CL = 1
tHZ (1)
–
na
–
19
–
22
ns
Data-out Low-Z time
tLZ
1–
ns
Data-out hold time (load)
tOH
2.5
–
2.5
–
2.5
–
ns
Data-out hold time (no load)
tOHN
1.8
–
1.8
–
1.8
–
ns
ACTIVE-to-PRECHARGE command
tRAS
44
120,000
48
120,000
50
120,000
ns
ACTIVE-to-ACTIVE command period
tRC
66
–
80
–
100
–
ns
ACTIVE-to-READ or WRITE delay
tRCD
19–20
–20–
ns
Refresh period (4,096 rows)
tREF
–
64
–
64
–
64
ms
Refresh period – (AT) (4,096 rows)
tREF
AT
–16–16
–16
ms
AUTO REFRESH command period
tRFC
66
–
80
–
100
–
ns
PRECHARGE command period
tRP
19
–
20
–
20
–
ns
ACTIVE bank a to ACTIVE bank b command
tRRD
2
–2
–
tCK
Transition time
tT
0.3
1.2
0.5
1.2
0.5
1.2
ns
WRITE recovery time
Auto precharge mode (a)
Manual precharge mode (m)
tWR (a)
1 CLK
+7.5ns
–1 CLK
+7ns
–1 CLK
+5ns
––
tWR (m)
15–15
–15–
ns
Exit SELF REFRESH to ACTIVE command
tXSR
67
–
80
–
100
–
ns