参数资料
型号: MT48V8M16LFB4-75M:G
元件分类: DRAM
英文描述: 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
封装: 8 X 8 MM, LEAD FREE, VFBGA-54
文件页数: 11/80页
文件大小: 2775K
PDF: 09005aef807f4885/Source: 09005aef8071a76b
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128Mbx16x32Mobile_2.fm - Rev. M 1/09 EN
19
2001 Micron Technology, Inc. All rights reserved.
128Mb: x16, x32 Mobile SDRAM
Register Definition
NOTE:
Notes:
1. For full-page accesses: y = 512 (x16), y = 256 (x32).
2. For BL = 2, A1–A8 (x16) or A1–A7 (x32) select the block-of-two burst; A0 selects the starting
column within the block.
3. For BL = 4, A2–A8 (x16) or A2–A7 (x32) select the block-of-four burst; A0–A1 select the start-
ing column within the block.
4. For BL = 8, A3–A8 (x16) or A3–A7 (x32) select the block-of-eight burst; A0–A2 select the
starting column within the block.
5. For a full-page burst, the full row is selected, and A0–A8 (x16) or A0–A7 (x32) select the
starting column.
6. Whenever a boundary of the block is reached within a given sequence above, the following
access wraps within the block.
7. For BL = 1, A0–A8 (x16) or A0–A7 (x32) select the unique column to be accessed, and mode
register bit M3 is ignored.
CAS Latency (CL)
CL is the delay, in clock cycles, between the registration of a READ command and the
availability of the first piece of output data. The latency can be set to 1, 2, or 3 clocks.
If a READ command is registered at clock edge n and the latency is m clocks, the data will
be available by clock edge n + m. The DQ will start driving as a result of the clock edge
one cycle earlier (n + m - 1), and provided that the relevant access times are met, the data
will be valid by clock edge n + m. For example, assuming that the clock cycle time is such
that all relevant access times are met, if a read command is registered at T0 and the
Table 6:
Burst Definition
Burst Length
Starting Column
Address
Order of Accesses Within a Burst
Type = Sequential
Type = Interleaved
2
A0
00-1
0-1
11-0
1-0
4
A1
A0
0
0-1-2-3
0
1
1-2-3-0
1-0-3-2
1
0
2-3-0-1
1
3-0-1-2
3-2-1-0
8
A2
A1
A0
0
0-1-2-3-4-5-6-7
0
1
1-2-3-4-5-6-7-0
1-0-3-2-5-4-7-6
0
1
0
2-3-4-5-6-7-0-1
2-3-0-1-6-7-4-5
0
1
3-4-5-6-7-0-1-2
3-2-1-0-7-6-5-4
1
0
4-5-6-7-0-1-2-3
1
0
1
5-6-7-0-1-2-3-4
5-4-7-6-1-0-3-2
1
0
6-7-0-1-2-3-4-5
6-7-4-5-2-3-0-1
1
7-0-1-2-3-4-5-6
7-6-5-4-3-2-1-0
Full page (y)
n = A0–A8 for x16, A0–
A7 for x32
(location 0–y)
Cn, Cn + 1,
Cn + 2,
Cn + 3, Cn + 4...,
…Cn - 1,
Cn…
Not supported
相关PDF资料
PDF描述
MS8256FKXA-12 256K X 8 MULTI DEVICE SRAM MODULE, 120 ns, DMA32
MT46V32M16BN-75IT 32M X 16 DDR DRAM, 0.75 ns, PBGA60
MT46V32M16P-6T 32M X 16 DDR DRAM, 0.7 ns, PDSO66
MT28F644W18FE-705KTET 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA56
MPAT-122128-1003MS 12200 MHz - 12750 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
相关代理商/技术参数
参数描述
MT48V8M16LFB4-8 ITG 制造商:Micron Technology Inc 功能描述:DRAM Chip Mobile SDRAM 128M-Bit 8Mx16 2.5V 54-Pin VFBGA Tray