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参数资料
| 型号： | MT48V8M16LFB4-75M:G |
| 元件分类： | DRAM |
| 英文描述： | 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 |
| 封装： | 8 X 8 MM, LEAD FREE, VFBGA-54 |
| 文件页数： | 52/80页 |
| 文件大小： | 2775K |
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PDF: 09005aef807f4885/Source: 09005aef8071a76b
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128Mbx16x32Mobile_2.fm - Rev. M 1/09 EN
56
2001 Micron Technology, Inc. All rights reserved.
128Mb: x16, x32 Mobile SDRAM
Electrical Specifications
Table 21:
IDD Specifications And Conditions (x32)
Notes 1, 3, 6, 11, 13, 31 apply to entire table; notes appear on page 57; VDD = VDDQ = +3.3V ±0.3V or VDD =
VDDQ = 2.5V ±0.2V or VDD = +2.5V ±0.2V, VDDQ = +1.8V ±0.15V
Parameter/Condition
Symbol
Max
Units
Notes
-75M
-8
-10
Operating current: Active mode; Burst = 2;
READ or WRITE; tRC = tRC (MIN)
IDD1
150
120
mA
Standby current: Power-down mode; All banks idle; CKE = LOW
IDD2
450
A
Standby current: Active mode; CKE = HIGH; CS# = HIGH; All
banks active after tRCD met; No accesses in progress
IDD3
45
40
mA
Operating current: Burst mode; Page
burst; READ or WRITE; All banks active
IDD4
130
115
110
mA
Auto refresh current: CKE = HIGH;
CS# = HIGH
tRFC = tRFC (MIN)
IDD5
235
220
180
mA
tRFC = 15.625s
IDD6
333
mA
tRFC = 3.906s(AT)
IDD6
666
mA
Table 22:
IDD7 Self Refresh Current Options (x32)
Note 4 applies to entire table; notes appear on page 57; VDD = VDDQ = +3.3V ±0.3V or VDD = VDDQ = 2.5V
±0.2V or VDD = +2.5V ±0.2V, VDDQ = +1.8V ±0.15V
Temperature-Compensated Self Refresh (TCSR)
Parameter/Condition
Max
Temperature
-75M/-8/-10
Units
Self refresh current: CKE < 0.2V (E4 = 1, E3 = 1)
85C
1000
A
Self refresh current: CKE < 0.2V (E4 = 0, E3 = 0)
70C
550
A
Self refresh current: CKE < 0.2V (E4 = 0, E3 = 1)
45C
400
A
Self refresh current: CKE < 0.2V (E4 = 1, E3 = 0)
15C
350
A
Table 23:
Capacitance (FBGA Pacakge)
Parameter
Symbol
Min
Max
Units
Notes
Input capacitance: CLK
CI1
1.5
3.5
pF
Input capacitance: All other input-only pins
CI2
1.5
3.8
pF
Input/Output capacitance: DQ
CIO
3.0
6.0
pF
Table 24:
Capacitance (TSOP Pacakge)
Parameter
Symbol
Min
Max
Units
Notes
Input capacitance: CLK
CI1
2.5
3.5
pF
Input capacitance: All other input-only pins
CI2
2.5
3.8
pF
Input/Output capacitance: DQ
CIO
4.0
6.0
pF
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MT48V8M16LFB4-8 ITG | 制造商:Micron Technology Inc 功能描述:DRAM Chip Mobile SDRAM 128M-Bit 8Mx16 2.5V 54-Pin VFBGA Tray |
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