参数资料
型号: MT48V8M16LFB4-75M:G
元件分类: DRAM
英文描述: 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
封装: 8 X 8 MM, LEAD FREE, VFBGA-54
文件页数: 74/80页
文件大小: 2775K
PDF: 09005aef807f4885/Source: 09005aef8071a76b
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128Mbx16x32Mobile_2.fm - Rev. M 1/09 EN
76
2001 Micron Technology, Inc. All rights reserved.
128Mb: x16, x32 Mobile SDRAM
Timing Diagrams
Figure 55:
Write – Full-page Burst
Notes:
1. x16: A9 and A11 = “Don’t Care.”
x32: A8, A9, and A11 = “Don’t Care.”
2. tWR must be satisfied prior to PRECHARGE command.
3. Page left open; no tRP.
tRCD
DQMU, DQML
CKE
CLK
A0–A9, A11
BA0, BA1
A10
tCMS
tAH
tAS
tAH
tAS
ROW
Full-page burst does not
self-terminate. Can use
BURST TERMINATE
command to stop.2, 3
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Full page completed
DON’T CARE
COMMAND
tCMH
tCMS
NOP
ACTIVE
NOP
WRITE
BURST TERM
NOP
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DQ
DIN m
tDH
tDS
DIN m + 1
DIN m + 2
DIN m + 3
tDH
tDS
tDH
tDS
tDH
tDS
DIN m - 1
tDH
tDS
tAH
tAS
BANK
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BANK
tCMH
tCKH
tCKS
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512 (x16) locations within same row
COLUMN m 1
T0
T1
T2
T3
T4
T5
Tn + 1
Tn + 2
Tn + 3
tCH
tCL
tCK
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相关代理商/技术参数
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MT48V8M16LFB4-8 ITG 制造商:Micron Technology Inc 功能描述:DRAM Chip Mobile SDRAM 128M-Bit 8Mx16 2.5V 54-Pin VFBGA Tray