PDF: 09005aef807f4885/Source: 09005aef8071a76b
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128Mbx16x32Mobile_2.fm - Rev. M 1/09 EN
50
2001 Micron Technology, Inc. All rights reserved.
128Mb: x16, x32 Mobile SDRAM
Electrical Specifications
Notes:
1. MAX operating case temperature, TC, is measured in the center of the package on the top
2. Device functionality is not guaranteed if the device exceeds maximum TC during operation.
3. All temperature specifications must be satisfied.
4. The case temperature should be measured by gluing a thermocouple to the top center of
the component. This should be done with a 1mm bead of conductive epoxy, as defined by
the JEDEC EIA/JESD51 standards. Care should be taken to ensure the thermocouple bead is
touching the case.
5. Operating ambient temperature surrounding the package.
Notes:
1. For designs expected to last beyond the die revision listed, contact Micron Applications
Engineering to confirm thermal impedance values.
2. Thermal resistance data is sampled from multiple lots, and the values should be viewed as
typical.
3. These are estimates; actual results may vary.
4. Thermal impedance values were obtained using the 128Mb SDRAM 54-pin TSOP.
Table 13:
Temperature Limits
Parameter
Symbol
Min
Max
Units
Notes
Operating case temperature:
Commercial
Industrial
Automotive
TC
0
–40
80
90
105
°C
Junction temperature:
Commercial
Industrial
Automotive
TJ
0
–40
85
95
110
°C
Ambient temperature:
Commercial
Industrial
Automotive
TA
0
–40
70
85
105
°C
Peak reflow temperature
TPEAK
–260
°C
Table 14:
Thermal Impedance Simulated Values
Die Revision
Package
Substrate
θ JA (°C/W)
Airflow =
0m/s
θ JA (°C/W)
Airflow =
1m/s
θ JA (°C/W)
Airflow =
2m/s
θ JB (°C/W)
θ JC (°C/W)
G
54-pin
2-layer
86.2
67.8
62
46.9
11.3
4-layer
58.9
50.7
47.6
41.5
54-ball
VFBGA
2-layer
72.1
57.3
50.6
36.0
4.1
4-layer
54.5
46.6
42.8
35.5
90-ball
VFBGA
2-layer
64.6
50.8
45.3
37.5
1.8
4-layer
48.2
41.1
38.1
32.1