- 您现在的位置：买卖IC网 > PDF目录262949 > MT48V8M16LFB4-75M:G 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 PDF资料下载
参数资料
| 型号： | MT48V8M16LFB4-75M:G |
| 元件分类： | DRAM |
| 英文描述： | 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 |
| 封装： | 8 X 8 MM, LEAD FREE, VFBGA-54 |
| 文件页数： | 26/80页 |
| 文件大小： | 2775K |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页当前第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页第71页第72页第73页第74页第75页第76页第77页第78页第79页第80页
PDF: 09005aef807f4885/Source: 09005aef8071a76b
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128Mbx16x32Mobile_2.fm - Rev. M 1/09 EN
32
2001 Micron Technology, Inc. All rights reserved.
128Mb: x16, x32 Mobile SDRAM
READs
A fixed-length READ burst may be followed by, or truncated with, a PRECHARGE
command to the same bank (provided that auto precharge was not activated), and a full-
page burst may be truncated with a PRECHARGE command to the same bank. The
PRECHARGE command should be issued x cycles before the clock edge at which the last
desired data element is valid, where x = CL - 1. This is shown in Figure 18 on page 33 for
each possible CL; data element n + 3 is either the last of a burst of four or the last desired
of a longer burst. Following the PRECHARGE command, a subsequent command to the
same bank cannot be issued until tRP is met. Note that part of the row precharge time is
hidden during the access of the last data element(s).
In the case of a fixed-length burst being executed to completion, a PRECHARGE
command issued at the optimum time (as described above) provides the same operation
that would result from the same fixed-length burst with auto precharge. The disadvan-
tage of the PRECHARGE command is that it requires that the command and address
buses be available at the appropriate time to issue the command; the advantage of the
PRECHARGE command is that it can be used to truncate fixed-length or full-page bursts.
相关PDF资料 |
PDF描述 |
|---|---|
| MS8256FKXA-12 | 256K X 8 MULTI DEVICE SRAM MODULE, 120 ns, DMA32 |
| MT46V32M16BN-75IT | 32M X 16 DDR DRAM, 0.75 ns, PBGA60 |
| MT46V32M16P-6T | 32M X 16 DDR DRAM, 0.7 ns, PDSO66 |
| MT28F644W18FE-705KTET | 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA56 |
| MPAT-122128-1003MS | 12200 MHz - 12750 MHz RF/MICROWAVE FIXED ATTENUATOR, 2.2 dB INSERTION LOSS-MAX |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MT48V8M16LFB4-8 ITG | 制造商:Micron Technology Inc 功能描述:DRAM Chip Mobile SDRAM 128M-Bit 8Mx16 2.5V 54-Pin VFBGA Tray |
发布紧急采购，3分钟左右您将得到回复。