参数资料
型号: W631GG6KB-12
厂商: Winbond Electronics
文件页数: 129/159页
文件大小: 0K
描述: IC DDR3 SDRAM 1GBIT 96WBGA
标准包装: 200
格式 - 存储器: RAM
存储器类型: DDR3 SDRAM
存储容量: 1G(64M x 16)
速度: 800MHz
接口: 并联
电源电压: 1.425 V ~ 1.575 V
工作温度: 0°C ~ 85°C
封装/外壳: 96-TFBGA
供应商设备封装: 96-WBGA(9x13)
包装: 托盘
Data
W631GG6KB
Table 44 – I DD4R and I DDQ4R Measurement-Loop Pattern 1
2
0
1
RD
D
0
1
1
0
0
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
00000000
-
0
2, 3
4
5
6, 7
D#, D#
RD
D
D#, D#
1
0
1
1
1
1
0
1
1
0
0
1
1
1
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
F
F
F
0
0
0
0
-
00110011
-
-
1
2
3
4
5
6
7
8-15
16-23
24-31
32-39
40-47
48-55
56-63
Repeat Sub-Loop 0, but BA[2:0] = 1
Repeat Sub-Loop 0, but BA[2:0] = 2
Repeat Sub-Loop 0, but BA[2:0] = 3
Repeat Sub-Loop 0, but BA[2:0] = 4
Repeat Sub-Loop 0, but BA[2:0] = 5
Repeat Sub-Loop 0, but BA[2:0] = 6
Repeat Sub-Loop 0, but BA[2:0] = 7
Data
Notes:
1. DM must be driven LOW all the time. DQS, DQS# are used according to RD Commands, otherwise MID-LEVEL.
2. Burst Sequence driven on each DQ signal by Read Command. Outside burst operation, DQ signals are MID-LEVEL.
Table 45 – I DD4W Measurement-Loop Pattern 1
2
0
1
WR
D
0
1
1
0
0
0
0
0
1
1
0
0
0
0
0
0
0
0
0
0
0
0
00000000
-
0
2, 3
4
5
6, 7
D#, D#
WR
D
D#, D#
1
0
1
1
1
1
0
1
1
0
0
1
1
0
0
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
F
F
F
0
0
0
0
-
00110011
-
-
1
2
3
4
5
6
7
8-15
16-23
24-31
32-39
40-47
48-55
56-63
Repeat Sub-Loop 0, but BA[2:0] = 1
Repeat Sub-Loop 0, but BA[2:0] = 2
Repeat Sub-Loop 0, but BA[2:0] = 3
Repeat Sub-Loop 0, but BA[2:0] = 4
Repeat Sub-Loop 0, but BA[2:0] = 5
Repeat Sub-Loop 0, but BA[2:0] = 6
Repeat Sub-Loop 0, but BA[2:0] = 7
Notes:
1. DM must be driven LOW all the time. DQS, DQS# are used according to WR Commands, otherwise MID-LEVEL.
2. Burst Sequence driven on each DQ signal by Write Command. Outside burst operation, DQ signals are MID-LEVEL.
Publication Release Date: Dec. 09, 2013
Revision A05
- 129 -
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