参数资料
型号: W631GG6KB-12
厂商: Winbond Electronics
文件页数: 35/159页
文件大小: 0K
描述: IC DDR3 SDRAM 1GBIT 96WBGA
标准包装: 200
格式 - 存储器: RAM
存储器类型: DDR3 SDRAM
存储容量: 1G(64M x 16)
速度: 800MHz
接口: 并联
电源电压: 1.425 V ~ 1.575 V
工作温度: 0°C ~ 85°C
封装/外壳: 96-TFBGA
供应商设备封装: 96-WBGA(9x13)
包装: 托盘
W631GG6KB
8.10.1 MPR Functional Description
?
?
?
?
One bit wide logical interface via all DQ pins during READ operation.
Register Read:
— DQL[0] and DQU[0] drive information from MPR.
— DQL[7:1] and DQU[7:1] either drive the same information as DQL[0], or they drive 0b.
Addressing during for Multi Purpose Register reads for all MPR agents:
— BA[2:0]: Don't care
— A[1:0]: A[1:0] must be equal to ?00‘b. Data read burst order in nibble is fixed
— A[2]: A[2] selects the burst order
For BL=8, A[2] must be equal to 0b, burst order is fixed to [0,1,2,3,4,5,6,7], *)
For Burst Chop 4 cases, the burst order is switched on nibble base
A[2]=0b, Burst order: 0,1,2,3 *)
A[2]=1b, Burst order: 4,5,6,7 *)
— A[9:3]: Don't care
— A10/AP: Don't care
— A11: Don't care
— A12/BC#: Selects burst chop mode on-the-fly, if enabled within MR0
Regular interface functionality during register reads:
— Support two Burst Ordering which are switched with A2 and A[1:0]=00b.
— Support of read burst chop (MRS and on-the-fly via A12/BC#)
— All other address bits (remaining column address bits including A10, all bank address bits) will
be ignored by the DDR3 SDRAM.
— Regular read latencies and AC timings apply.
— DLL must be locked prior to MPR Reads.
Note:
*) Burst order bit 0 is assigned to LSB and burst order bit 7 is assigned to MSB of the selected MPR agent.
Publication Release Date: Dec. 09, 2013
Revision A05
- 35 -
相关PDF资料
PDF描述
AMC20DRAS-S734 CONN EDGECARD 40POS .100 R/A PCB
FMC12DREI-S13 CONN EDGECARD 24POS .100 EXTEND
EPF6024AQC240-2N IC FLEX 6000 FPGA 24K 240-PQFP
EPF6024AQC240-2 IC FLEX 6000 FPGA 24K 240-PQFP
EPF10K10QC208-3 IC FLEX 10K FPGA 10K 208-PQFP
相关代理商/技术参数
参数描述
W631GG6KB-15 功能描述:IC DDR3 SDRAM 1GBIT 96WBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,500 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?(单线) 电源电压:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-TSSOP,8-MSOP(0.118",3.00mm 宽) 供应商设备封装:8-MSOP 包装:带卷 (TR)
W631GG8KB-11 制造商:Winbond Electronics Corp 功能描述:IC DDR3 SDRAM 1GBIT 制造商:Winbond Electronics Corp 功能描述:IC DDR3 SDRAM 1GBIT 78WBGA
W631GG8KB-12 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR3 SDRAM 1G-Bit 128Mx8 1.5V 制造商:Winbond Electronics Corp 功能描述:IC DDR3 SDRAM 1GBIT 制造商:Winbond Electronics Corp 功能描述:IC DDR3 SDRAM 1GBIT 78WBGA
W631GG8KB-15 制造商:Winbond Electronics Corp 功能描述:IC DDR3 SDRAM 1GBIT 制造商:Winbond Electronics Corp 功能描述:IC DDR3 SDRAM 1GBIT 78WBGA
W632 制造商:LUMINIS 制造商全称:LUMINIS 功能描述:Wall mount