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参数资料
| 型号： | PH28F128W18BD60A |
| 厂商： | INTEL CORP |
| 元件分类： | PROM |
| 英文描述： | 8M X 16 FLASH 1.8V PROM, 60 ns, PBGA56 |
| 封装： | 9 X 11 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-56 |
| 文件页数： | 1/106页 |
| 文件大小： | 1496K |
| 代理商： | PH28F128W18BD60A |
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Order Number: 290701, Revision: 015
07-Dec-2005
Intel Wireless Flash Memory (W18)
28F320W18, 28F640W18, 28F128W18
Datasheet
Product Features
The Intel
Wireless Flash Memory (W18) device with flexible multi-partition dual-operation
architecture, provides high-performance Asynchronous and Synchronous Burst reads. It is an
ideal memory for low-voltage burst CPUs. Combining high read performance with flash
memory intrinsic non-volatility, the W18 device eliminates the traditional system-performance
paradigm of shadowing redundant code memory from slow nonvolatile storage to faster
execution memory. It reduces total memory requirement that increases reliability and reduces
overall system power consumption and cost. The W18 device’s flexible multi-partition
architecture allows program or erase to occur in one partition while reading from another
partition. This allows for higher data write throughput compared to single-partition architectures
and designers can choose code and data partition sizes. The dual-operation architecture allows
two processors to interleave code operations while program and erase operations take place in
the background.
■
High Performance Read-While-Write/
Erase
— Burst frequency at 66 MHz
(zero wait states)
— 60 ns Initial access read speed
— 11 ns Burst mode read speed
— 20 ns Page mode read speed
— 4-, 8-, 16-, and Continuous-Word Burst
mode reads
— Burst and Page mode reads in all
Blocks, across all partition boundaries
— Burst Suspend feature
— Enhanced Factory Programming at
3.1 s/word
■
Security
— 128-bit OTP Protection Register:
64 unique pre-programmed bits +
64 user-programmable bits
— Absolute Write Protection with VPP at
ground
— Individual and Instantaneous Block
Locking/Unlocking with Lock-Down
Capability
■
Quality and Reliability
— Temperature Range: –40 °C to +85 °C
— 100K Erase Cycles per Block
— 90 nm ETOX IX Process
— 130 nm ETOX VIII Process
■
Architecture
— Multiple 4-Mbit partitions
— Dual Operation: RWW or RWE
— Parameter block size = 4-Kword
— Main block size = 32-Kword
— Top or bottom parameter devices
— 16-bit wide data bus
■
Software
— 5 s (typ.) Program and Erase Suspend
latency time
— Flash Data Integrator (FDI) and
Common Flash Interface (CFI)
Compatible
— Programmable WAIT signal polarity
■
Packaging and Power
— 90 nm: 32- and 64-Mbit in VF BGA
— 130 nm: 32-, 64-, and 128-Mbit in VF
BGA; 128-Mbit in QUAD+ package
— 56 Active Ball Matrix, 0.75 mm Ball-
Pitch
—VCC = 1.70 V to 1.95 V
—VCCQ (90 nm) = 1.70 V to 1.95 V
—VCCQ (130 nm) = 1.70 V to 2.24 V or
1.35 V to 1.80 V
—VCCQ (130 nm) = 1.35 V to 2.24 V
— Standby current (130 nm): 8 A (typ.)
— Read current: 8 mA (4-word burst, typ.)
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