参数资料
型号: PH28F128W18BD60A
厂商: INTEL CORP
元件分类: PROM
英文描述: 8M X 16 FLASH 1.8V PROM, 60 ns, PBGA56
封装: 9 X 11 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-56
文件页数: 80/106页
文件大小: 1496K
代理商: PH28F128W18BD60A
Intel
Wireless Flash Memory (W18)
Datasheet
Intel Wireless Flash Memory (W18)
07-Dec-2005
Order Number: 290701, Revision: 015
75
12.3
Read-While-Write and Read-While-Erase
The Intel Wireless Flash Memory (W18) supports flexible multi-partition dual-operation
architecture. By dividing the flash memory into many separate partitions, the device can read from
one partition while programing or erasing in another partition; hence the terms, RWW and RWE.
Both of these features greatly enhance data storage performance.
Figure 30.
Block Erase Flowchart
SR[3,1] must be cleared before the WSM will allow further
erase attempts.
Only the Clear Status Register command clears SR[5:3,1].
If an error is detected, clear the Status register before
attempting an erase retry or other error recovery.
Start
FULL ERASE STATUS CHECK PROCEDURE
Repeat for subsequent block erasures.
Full status register check can be done after each block erase
or after a sequence of block erasures.
No
Suspend
Erase
1
0
1
0
Yes
Suspend
Erase
Loop
0
Write 20h
Block Address
Write D0h and
Block Address
Read Status
Register
SR[7] =
Full Erase
Status Check
(if desired)
Block Erase
Complete
Read Status
Register
Block Erase
Successful
SR[1] =
Erase of
Locked Block
Aborted
BLOCK ERASE PROCEDURE
Bus
Operation
Command
Comments
Write
Block
Erase
Setup
Data = 20h
Addr = Block to be erased (BA)
Write
Erase
Confirm
Data = D0h
Addr = Block to be erased (BA)
Read
Read SRD
Toggle CE# or OE# to update SRD
Standby
Check SR[7]
1 = WSM ready
0 = WSM busy
Bus
Operation
Command
Comments
SR[3] =
V
PP Range
Error
SR[5:4] =
Command
Sequence Error
SR[5] =
Block Erase
Error
Standby
Check SR[3]
1 = V
PP error
Standby
Check SR[5:4]
Both 1 = Command sequence error
Standby
Check SR[5]
1 = Block erase error
Standby
Check SR[1]
1 = Attempted erase of locked block
Erase aborted
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