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参数资料
型号： PH28F128W18BD60A
厂商： INTEL CORP
元件分类： PROM
英文描述： 8M X 16 FLASH 1.8V PROM, 60 ns, PBGA56
封装： 9 X 11 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-56
文件页数： 106/106页
文件大小： 1496K
代理商： PH28F128W18BD60A
Intel
Wireless Flash Memory (W18)
Datasheet
Intel Wireless Flash Memory (W18)
07-Dec-2005
Order Number: 290701, Revision: 015
99
Table 39.
System Interface Information
Table 38.
CFI Identification
Offset
Length
Description
Addr.
Hex
Code
Value
10h
3
Query-unique ASCII string “QRY”
10:
11:
12:
--51
--52
--59
“Q”
“R”
“Y”
13h
2
Primary vendor command set and control interface ID code.
16-bit ID code for vendor-specific algorithms.
13:
14:
--03
--00
—
15h
2
Extended Query Table primary algorithm address
15:
16:
--39
--00
—
17h
2
Alternate vendor command set and control interface ID code.
0000h means no second vendor-specified algorithm exists.
17:
18:
--00
—
19h
2
Secondary algorithm Extended Query Table address.
0000h means none exists.
19:
1A:
--00
—
Offset
Length
Description
Add.
Hex
Code Value
1Bh
1
1B:
--17
1.7V
1Ch
1
1C:
--19
1.9V
1Dh
1
1D:
--B4
11.4V
1Eh
1
1E:
--C6
12.6V
1Fh
1
“n” such that typical single word program time-out = 2
n -sec
1F:
--04
16s
20h
1
“n” such that typical max. buffer write time-out = 2
n -sec
20:
--00
NA
21h
1
“n” such that typical block erase time-out = 2
n m-sec
21:
--0A
1s
22h
1
“n” such that typical full chip erase time-out = 2
n m-sec
22:
--00
NA
23h
1
“n” such that maximum word program time-out = 2
n times typical 23:
--04
256s
24h
1
“n” such that maximum buffer write time-out = 2
n times typical
24:
--00
NA
25h
1
“n” such that maximum block erase time-out = 2
n times typical
25:
--03
8s
26h
1
“n” such that maximum chip erase time-out = 2
n times typical
26:
--00
NA
VCC logic supply minimum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
VCC logic supply maximum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
VPP [programming] supply minimum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
VPP [programming] supply maximum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
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