参数资料
型号: PH28F128W18BD60A
厂商: INTEL CORP
元件分类: PROM
英文描述: 8M X 16 FLASH 1.8V PROM, 60 ns, PBGA56
封装: 9 X 11 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-56
文件页数: 31/106页
文件大小: 1496K
代理商: PH28F128W18BD60A
Intel
Wireless Flash Memory (W18)
07-Dec-2005
Intel Wireless Flash Memory (W18)
Datasheet
30
Order Number: 290701, Revision: 015
1.
maximum allowable input slew rate.
2.
AC specifications assume the data bus voltage is less than or equal to VCCQ when a read operation is
initiated.
3.
Address hold in synchronous-burst mode is defined as tCHAX or tVHAX, whichever timing specification is
satisfied first.
4.
OE# may be delayed by up to tELQV– tGLQV after the falling edge of CE# without impact to tELQV.
5.
Sampled, not 100% tested.
6.
Applies only to subsequent synchronous reads.
7.
During the initial access of a synchronous burst read, data from the first word may begin to be driven
onto the data bus as early as the first clock edge after tAVQV.
8.
All the preceding specifications apply to all densities.
Synchronous Specifications
R301
tAVCH
Address Valid Setup to CLK
7
-
ns
R302
tVLCH
ADV# Low Setup to CLK
7
-
ns
R303
tELCH
CE# Low Setup to CLK
7
-
ns
R304
tCHQV
CLK to Output Valid
-
11
ns
8
R305
tCHQX
Output Hold from CLK
3
-
ns
R306
tCHAX
Address Hold from CLK
7
-
ns
3
R307
tCHTV
CLK to WAIT Valid
-
11
ns
8
Table 11.
Read Operations - 90 nm Lithography (Sheet 2 of 2)
#
S
y
m
bol
Parameter (1,2)
VCCQ=
1.70 V – 1.95 V
Unit
Notes
Min
Max
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