参数资料
型号: PH28F128W18BD60A
厂商: INTEL CORP
元件分类: PROM
英文描述: 8M X 16 FLASH 1.8V PROM, 60 ns, PBGA56
封装: 9 X 11 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-56
文件页数: 102/106页
文件大小: 1496K
代理商: PH28F128W18BD60A
Intel
Wireless Flash Memory (W18)
Datasheet
Intel Wireless Flash Memory (W18)
07-Dec-2005
Order Number: 290701, Revision: 015
95
2.
Illegal commands are those not defined in the command set.
3.
All partitions default to Read Array mode at power-up. A Read Array command issued to a busy partition results in
undermined data when a partition address is read.
4.
Both cycles of 2 cycles commands should be issued to the same partition address. If they are issued to different partitions,
the second write determines the active partition. Both partitions will output status information when read.
5.
If the WSM is active, both cycles of a 2 cycle command are ignored. This differs from previous Intel devices.
6.
The Clear Status command clears Status Register error bits except when the WSM is running (Pgm Busy, Erase Busy,
Pgm Busy In Erase Suspend, OTP Busy, EFP modes) or suspended (Erase Suspend, Pgm Suspend, Pgm Suspend In
Erase Suspend).
7.
EFP writes are allowed only when Status Register bit SR.0 = 0. EFP is busy if Block Address = address at EFP Confirm
command. Any other commands are treated as data.
8.
The "current state" is that of the WSM, not the partition.
9.
Confirm commands (Lock Block, Unlock Block, Lock-down Block, Configuration Register) perform the operation and then
move to the Ready State.
10.
In Erase suspend, the only valid two cycle commands are "Program Word", "Lock/Unlock/Lockdown Block", and "CR
Write". Both cycles of other two cycle commands ("OEM CAM program & confirm", "Program OTP & confirm", "EFP Setup
& confirm", "Erase setup & confirm") will be ignored. In Program suspend or Program suspend in Erase suspend, both
cycles of all two cycle commands will be ignored.
相关PDF资料
PDF描述
PHC0683E1133-H IC SOCKET
PHP12NQ15T N-channel TrenchMOS transistor
PHB12NQ15T N-channel TrenchMOS transistor
PHD12NQ15T N-channel TrenchMOS transistor
PHP15N06E PowerMOS transistor
相关代理商/技术参数
参数描述
PH28F160C3BD70A 制造商:Micron Technology Inc 功能描述:MM#865392FLASH 28F160C3BD 70 VF-PBGA46 C
PH28F256L18B85 制造商:INTEL 制造商全称:Intel Corporation 功能描述:StrataFlash Wireless Memory
PH28F256L18B85A 制造商:Micron Technology Inc 功能描述:MM#875138FLASH 28F256L18B 85 VF-PBGA79 S
PH28F256L18T85 制造商:INTEL 制造商全称:Intel Corporation 功能描述:StrataFlash Wireless Memory
PH28F320C3TD70A 制造商:Micron Technology Inc 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 2M x 16 70ns 48-Pin VFBGA Tray 制造商:Micron Technology Inc 功能描述:MM#869664FLASH 28F320C3TD 70 VF-PBGA47 E