参数资料
型号: PH28F128W18BD60A
厂商: INTEL CORP
元件分类: PROM
英文描述: 8M X 16 FLASH 1.8V PROM, 60 ns, PBGA56
封装: 9 X 11 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-56
文件页数: 18/106页
文件大小: 1496K
代理商: PH28F128W18BD60A
Intel
Wireless Flash Memory (W18)
Datasheet
Intel Wireless Flash Memory (W18)
07-Dec-2005
Order Number: 290701, Revision: 015
19
Figure 5.
88-Ball (80 Active Balls) QUAD+ Ballout
Notes:
1.
Unused upper address balls can be treated as NC (for 128-Mbit device, A[25:23] are not used).
2.
See Section 3.0, “Package Information” on page 15 for the mechanical specifications for the package.
Flash specific
SRAM/PSRAM specific
Global
Legend:
Top View - Ball Side Down
8
7
6
5
4
3
2
1
A
B
C
D
E
F
G
H
J
K
L
M
DU
A4
DU
A5
A3
A2
A7
A1
A6
A0
A18
A19
VSS
A23
A24
A25
A17
F2-VCC
CLK
A21
A22
A12
A11
A13
A9
P1-CS#
F-VPP,
F-VPEN
A20
A10
A15
F-WE#
A8
D8
D2
D10
D5
D13
WAIT
A14
A16
F1-CE#
P-Mode,
P-CRE
VSS
P2-CS#
F1-VCC
F2-VCC
VCCQ
F3-CE#
D0
D1
D9
D3
D4
D6
D7
D15
D11
D12
D14
F1-OE#
F2-OE#
P-VCC
S-CS2
R-WE#
R-UB#
R-LB#
R-OE#
S-VCC
S-CS1#
F1-VCC
F-WP#
ADV#
F-RST#
F2-CE#
VCCQ
VSS
VCCQ
VSS
相关PDF资料
PDF描述
PHC0683E1133-H IC SOCKET
PHP12NQ15T N-channel TrenchMOS transistor
PHB12NQ15T N-channel TrenchMOS transistor
PHD12NQ15T N-channel TrenchMOS transistor
PHP15N06E PowerMOS transistor
相关代理商/技术参数
参数描述
PH28F160C3BD70A 制造商:Micron Technology Inc 功能描述:MM#865392FLASH 28F160C3BD 70 VF-PBGA46 C
PH28F256L18B85 制造商:INTEL 制造商全称:Intel Corporation 功能描述:StrataFlash Wireless Memory
PH28F256L18B85A 制造商:Micron Technology Inc 功能描述:MM#875138FLASH 28F256L18B 85 VF-PBGA79 S
PH28F256L18T85 制造商:INTEL 制造商全称:Intel Corporation 功能描述:StrataFlash Wireless Memory
PH28F320C3TD70A 制造商:Micron Technology Inc 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 2M x 16 70ns 48-Pin VFBGA Tray 制造商:Micron Technology Inc 功能描述:MM#869664FLASH 28F320C3TD 70 VF-PBGA47 E